Graphene based Schottky junction solar cells on patterned silicon-pillar-array substrate

Graphene-on-silicon Schottky junction solar cells were prepared with pillar-array-patterned silicon substrate. Such patterned substrate showed an anti-reflective characteristic and led to an absorption enhancement of the solar cell, which showed enhanced performance with short-circuit current densit...

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Bibliographic Details
Published in:Applied physics letters 2011-12, Vol.99 (23), p.233505-233505-3
Main Authors: Feng, Tingting, Xie, Dan, Lin, Yuxuan, Zang, Yongyuan, Ren, Tianling, Song, Rui, Zhao, Haiming, Tian, He, Li, Xiao, Zhu, Hongwei, Liu, Litian
Format: Article
Language:English
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Summary:Graphene-on-silicon Schottky junction solar cells were prepared with pillar-array-patterned silicon substrate. Such patterned substrate showed an anti-reflective characteristic and led to an absorption enhancement of the solar cell, which showed enhanced performance with short-circuit current density, open-circuit voltage, fill factor, and energy conversion efficiency of 464.86mV, 14.58 mA/cm 2 , 0.29, and 1.96%, respectively. Nitric acid was used to dope graphene film and the cell performance showed a great improvement with efficiency increasing to 3.55%. This is due to the p-type chemical doping effect of HNO 3 which increases the work function and the carrier density of graphene.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3665404