Extraction of the contact resistance from the saturation region of rubrene single-crystal transistors

A modified transmission-line method (TLM) is proposed to extract the contact resistance from the transistor saturation region. The conventional TLM requires a linear current-voltage characteristic, and this requirement strongly limits its application. In this study, we focused on the pinch-off point...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2011-12, Vol.99 (23), p.233301-233301-3
Main Authors: Imakawa, Masaki, Sawabe, Kosuke, Yomogida, Yohei, Iwasa, Yoshihiro, Takenobu, Taishi
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A modified transmission-line method (TLM) is proposed to extract the contact resistance from the transistor saturation region. The conventional TLM requires a linear current-voltage characteristic, and this requirement strongly limits its application. In this study, we focused on the pinch-off point of the output characteristics and analyzed the contact resistance using nonlinear output curves. We applied the modified TLM to both p- and n-type rubrene single-crystal transistors and compared the mobility differences in terms of both the intrinsic bandwidth and the extrinsic carrier trap density.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3666236