High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer

A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was...

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Bibliographic Details
Published in:Applied physics letters 2011-12, Vol.99 (23), p.233308-233308-4
Main Authors: Chao, Yu-Chiang, Chung, Chin-Ho, Zan, Hsiao-Wen, Meng, Hsin-Fei, Ku, Ming-Che
Format: Article
Language:English
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Summary:A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO 3 /Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6V, the on/off current ratio of 4×10 4 , and the switching swing of 105mV/decade were achieved. A low-power-consumption inverter was also demonstrated.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3668086