High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer

A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2011-12, Vol.99 (23), p.233308-233308-4
Main Authors: Chao, Yu-Chiang, Chung, Chin-Ho, Zan, Hsiao-Wen, Meng, Hsin-Fei, Ku, Ming-Che
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c284t-a64486cb2360e46ef482ab900a7871a51441bc58216ff0e574c9d6b84b8b0f553
cites cdi_FETCH-LOGICAL-c284t-a64486cb2360e46ef482ab900a7871a51441bc58216ff0e574c9d6b84b8b0f553
container_end_page 233308-4
container_issue 23
container_start_page 233308
container_title Applied physics letters
container_volume 99
creator Chao, Yu-Chiang
Chung, Chin-Ho
Zan, Hsiao-Wen
Meng, Hsin-Fei
Ku, Ming-Che
description A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO 3 /Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6V, the on/off current ratio of 4×10 4 , and the switching swing of 105mV/decade were achieved. A low-power-consumption inverter was also demonstrated.
doi_str_mv 10.1063/1.3668086
format article
fullrecord <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3668086</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c284t-a64486cb2360e46ef482ab900a7871a51441bc58216ff0e574c9d6b84b8b0f553</originalsourceid><addsrcrecordid>eNp1kE1LAzEURYMoWKsL_0G2LlKTycekG0GKWqHgRndCeEmTOmUmKUkU-u-d0i7cuHpc3rl3cRC6ZXTGqOL3bMaV0lSrMzRhtG0JZ0yfowmllBM1l-wSXZWyHaNsOJ-gz2W3-SI7n0PKA0Tn8Y_PtXPQ413q94PPOEJMOa1xzRBLV2rKBVsofo1TxNBlUirY3mOX4vZ7A3V8nKrX6CJAX_zN6U7Rx_PT-2JJVm8vr4vHFXGNFpWAEkIrZxuuqBfKB6EbsHNKodUtA8mEYNZJ3TAVAvWyFW6-VlYLqy0NUvIpujvuupxKyT6YXe4GyHvDqDloMcyctIzsw5EtrqtQuxT_hw9uzB83ZnTDfwFvA2uH</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>American Institute of Physics</source><creator>Chao, Yu-Chiang ; Chung, Chin-Ho ; Zan, Hsiao-Wen ; Meng, Hsin-Fei ; Ku, Ming-Che</creator><creatorcontrib>Chao, Yu-Chiang ; Chung, Chin-Ho ; Zan, Hsiao-Wen ; Meng, Hsin-Fei ; Ku, Ming-Che</creatorcontrib><description>A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO 3 /Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6V, the on/off current ratio of 4×10 4 , and the switching swing of 105mV/decade were achieved. A low-power-consumption inverter was also demonstrated.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3668086</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2011-12, Vol.99 (23), p.233308-233308-4</ispartof><rights>2011 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c284t-a64486cb2360e46ef482ab900a7871a51441bc58216ff0e574c9d6b84b8b0f553</citedby><cites>FETCH-LOGICAL-c284t-a64486cb2360e46ef482ab900a7871a51441bc58216ff0e574c9d6b84b8b0f553</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3668086$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,778,780,791,27901,27902,76125</link.rule.ids></links><search><creatorcontrib>Chao, Yu-Chiang</creatorcontrib><creatorcontrib>Chung, Chin-Ho</creatorcontrib><creatorcontrib>Zan, Hsiao-Wen</creatorcontrib><creatorcontrib>Meng, Hsin-Fei</creatorcontrib><creatorcontrib>Ku, Ming-Che</creatorcontrib><title>High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer</title><title>Applied physics letters</title><description>A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO 3 /Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6V, the on/off current ratio of 4×10 4 , and the switching swing of 105mV/decade were achieved. A low-power-consumption inverter was also demonstrated.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEURYMoWKsL_0G2LlKTycekG0GKWqHgRndCeEmTOmUmKUkU-u-d0i7cuHpc3rl3cRC6ZXTGqOL3bMaV0lSrMzRhtG0JZ0yfowmllBM1l-wSXZWyHaNsOJ-gz2W3-SI7n0PKA0Tn8Y_PtXPQ413q94PPOEJMOa1xzRBLV2rKBVsofo1TxNBlUirY3mOX4vZ7A3V8nKrX6CJAX_zN6U7Rx_PT-2JJVm8vr4vHFXGNFpWAEkIrZxuuqBfKB6EbsHNKodUtA8mEYNZJ3TAVAvWyFW6-VlYLqy0NUvIpujvuupxKyT6YXe4GyHvDqDloMcyctIzsw5EtrqtQuxT_hw9uzB83ZnTDfwFvA2uH</recordid><startdate>20111205</startdate><enddate>20111205</enddate><creator>Chao, Yu-Chiang</creator><creator>Chung, Chin-Ho</creator><creator>Zan, Hsiao-Wen</creator><creator>Meng, Hsin-Fei</creator><creator>Ku, Ming-Che</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20111205</creationdate><title>High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer</title><author>Chao, Yu-Chiang ; Chung, Chin-Ho ; Zan, Hsiao-Wen ; Meng, Hsin-Fei ; Ku, Ming-Che</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c284t-a64486cb2360e46ef482ab900a7871a51441bc58216ff0e574c9d6b84b8b0f553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chao, Yu-Chiang</creatorcontrib><creatorcontrib>Chung, Chin-Ho</creatorcontrib><creatorcontrib>Zan, Hsiao-Wen</creatorcontrib><creatorcontrib>Meng, Hsin-Fei</creatorcontrib><creatorcontrib>Ku, Ming-Che</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chao, Yu-Chiang</au><au>Chung, Chin-Ho</au><au>Zan, Hsiao-Wen</au><au>Meng, Hsin-Fei</au><au>Ku, Ming-Che</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer</atitle><jtitle>Applied physics letters</jtitle><date>2011-12-05</date><risdate>2011</risdate><volume>99</volume><issue>23</issue><spage>233308</spage><epage>233308-4</epage><pages>233308-233308-4</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO 3 /Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6V, the on/off current ratio of 4×10 4 , and the switching swing of 105mV/decade were achieved. A low-power-consumption inverter was also demonstrated.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3668086</doi></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2011-12, Vol.99 (23), p.233308-233308-4
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_3668086
source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); American Institute of Physics
title High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T23%3A27%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-performance%20vertical%20polymer%20nanorod%20transistors%20based%20on%20air-stable%20conjugated%20polymer&rft.jtitle=Applied%20physics%20letters&rft.au=Chao,%20Yu-Chiang&rft.date=2011-12-05&rft.volume=99&rft.issue=23&rft.spage=233308&rft.epage=233308-4&rft.pages=233308-233308-4&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.3668086&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c284t-a64486cb2360e46ef482ab900a7871a51441bc58216ff0e574c9d6b84b8b0f553%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true