The role of vicinal silicon surfaces in the formation of epitaxial twins during the growth of III-V thin films

We examine the role of vicinal surface steps in the formation and propagation of twins during the growth of epitaxial III-V thin films (GaAs, InP, GaSb, AlSb) on silicon substrates. This is achieved through the combined use of two-dimensional X-ray diffraction and conventional transmission electron...

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Bibliographic Details
Published in:Journal of applied physics 2011-12, Vol.110 (12), p.124316-124316-7
Main Authors: Devenyi, G. A., Woo, S. Y., Ghanad-Tavakoli, S., Hughes, R. A., Kleiman, R. N., Botton, G. A., Preston, J. S.
Format: Article
Language:English
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Summary:We examine the role of vicinal surface steps in the formation and propagation of twins during the growth of epitaxial III-V thin films (GaAs, InP, GaSb, AlSb) on silicon substrates. This is achieved through the combined use of two-dimensional X-ray diffraction and conventional transmission electron microscopy techniques, which allow for both a macro and nano/micro characterization of the material systems. Observed is a systematic suppression of twins formed opposite to the tilt direction of vicinal substrates through a process of step-flow overgrowth of nucleated twins, and an enhancement of twins toward the tilt direction when the fastest growth planes are aligned with the step-flow. These results indicate a probable path to the enhancement of the electronic mobility of lateral devices based on III-V semiconductors on silicon.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3671022