Barrierless hole injection through sub-bandgap occupied states in organic light emitting diodes using substoichiometric MoOx anode interfacial layer

In this letter, highly efficient hole injection was demonstrated in hole only devices based on organic semiconductors with different highest occupied molecular orbital level and transport properties. The barrierless hole injection was achieved by using a substoichiometric MoOx thin film (consisting...

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Bibliographic Details
Published in:Applied physics letters 2012-01, Vol.100 (1)
Main Authors: Vasilopoulou, Maria, Palilis, Leonidas C., Georgiadou, Dimitra G., Kennou, Stella, Kostis, Ioannis, Davazoglou, Dimitris, Argitis, Panagiotis
Format: Article
Language:English
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Summary:In this letter, highly efficient hole injection was demonstrated in hole only devices based on organic semiconductors with different highest occupied molecular orbital level and transport properties. The barrierless hole injection was achieved by using a substoichiometric MoOx thin film (consisting of 65% Mo+6 and 35% Mo+5) as a higly effective anode interfacial layer. The current in these devices was found to be space charge limited, achieved due to the formation of highly efficient anode ohmic contact via the excellent band alignment through occupied gap states at the ITO/MoOx and MoOx/organic semiconductor modified interface. Quite remarkably, the efficiency of hole injection was found to be almost independent of the MoOx thickness, which is indicative of perfect band alignment at the anode interface.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3673283