Intrinsic parameter extraction of a-InGaZnO thin-film transistors by a gated-four-probe method

We analyzed the intrinsic electrical characteristics of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) using a gated-four-probe method. Based on the back channel potential, the extraction of intrinsic field-effect mobility ( μ FEi ) and parasitic resistance in source ( R s ) and drain ( R d...

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Bibliographic Details
Published in:Applied physics letters 2012-01, Vol.100 (2), p.023506-023506-4
Main Authors: Jeong, Jaewook, Kim, Joonwoo, Jun Lee, Gwang, Choi, Byeong-Dae
Format: Article
Language:English
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Summary:We analyzed the intrinsic electrical characteristics of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) using a gated-four-probe method. Based on the back channel potential, the extraction of intrinsic field-effect mobility ( μ FEi ) and parasitic resistance in source ( R s ) and drain ( R d ) electrodes was performed especially for low V GS and V DS conditions. The resulting μ FEi showed typical V GS dependency of amorphous semiconductor TFTs. However, R s and R d showed that there can be non-uniformity in source/drain parasitic resistance, which indicates that a separate analysis of the parameters of each electrode is essential for further improvement of the performance of a-IGZO TFTs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3675876