Effect of an electron blocking layer on the piezoelectric field in InGaN/GaN multiple quantum well light-emitting diodes

We report the effect of an electron blocking layer (EBL) on the piezoelectric field in InGaN/GaN multiple quantum well light-emitting diodes (LEDs). Electric-field-dependent ER measurements showed an enhanced piezoelectric field in LEDs with a p- AlGaN EBL compared with LEDs without EBL. In contrast...

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Bibliographic Details
Published in:Applied physics letters 2012-01, Vol.100 (4), p.041119-041119-4
Main Authors: Lee, Dong-Yul, Han, Sang-Heon, Lee, Dong-Ju, Wook Lee, Jeong, Kim, Dong-Joon, Sun Kim, Young, Kim, Sung-Tae
Format: Article
Language:English
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Summary:We report the effect of an electron blocking layer (EBL) on the piezoelectric field in InGaN/GaN multiple quantum well light-emitting diodes (LEDs). Electric-field-dependent ER measurements showed an enhanced piezoelectric field in LEDs with a p- AlGaN EBL compared with LEDs without EBL. In contrast, LEDs with a p- AlGaN EBL exhibited reduced blueshift and a sublinear increase of full width at half maximum in EL spectra at low current densities. These behaviors can be explained by the strong localization of injected carriers in dominant InGaN regions due to an increase of the piezoelectric field by subsequent growing EBL.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3681162