Magnetic and electronic properties of the interface between half metallic Fe3O4 and semiconducting ZnO

We have investigated the magnetic depth profile of an epitaxial Fe3O4 thin film grown directly on a semiconducting ZnO substrate by soft x-ray resonant magnetic reflectometry (XRMR) and electron energy loss spectroscopy (EELS). Consistent chemical profiles at the interface between ZnO and Fe3O4 are...

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Published in:Applied physics letters 2012-02, Vol.100 (8)
Main Authors: Brück, S., Paul, M., Tian, H., Müller, A., Kufer, D., Praetorius, C., Fauth, K., Audehm, P., Goering, E., Verbeeck, J., Van Tendeloo, G., Sing, M., Claessen, R.
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cited_by cdi_FETCH-LOGICAL-c194t-4fbf0559899a3e9df0b644ea37dc4061300177ad041c7daa294c9d870ea3fbe83
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container_title Applied physics letters
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creator Brück, S.
Paul, M.
Tian, H.
Müller, A.
Kufer, D.
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Verbeeck, J.
Van Tendeloo, G.
Sing, M.
Claessen, R.
description We have investigated the magnetic depth profile of an epitaxial Fe3O4 thin film grown directly on a semiconducting ZnO substrate by soft x-ray resonant magnetic reflectometry (XRMR) and electron energy loss spectroscopy (EELS). Consistent chemical profiles at the interface between ZnO and Fe3O4 are found from both methods. Valence selective EELS and XRMR reveal independently that the first monolayer of Fe at the interface between ZnO and Fe3O4 contains only Fe3+ ions. Besides this narrow 2.5 Å interface layer, Fe3O4 shows magnetic bulk properties throughout the whole film making highly efficient spin injection in this system feasible.
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title Magnetic and electronic properties of the interface between half metallic Fe3O4 and semiconducting ZnO
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