Efficient directional spontaneous emission from an InGaAs/InP heterostructure with an integral parabolic reflector

In order to increase the radiative efficiency and directivity of spontaneous emission from a lattice-matched InGaAs/InP heterostructure, we have polished the substrate into a parabolic reflector. We combine optical and thermal measurements to obtain the absolute external efficiency over a wide range...

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Bibliographic Details
Published in:Journal of applied physics 1998-11, Vol.84 (9), p.5360-5362
Main Authors: Gfroerer, T. H., Cornell, E. A., Wanlass, M. W.
Format: Article
Language:English
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Summary:In order to increase the radiative efficiency and directivity of spontaneous emission from a lattice-matched InGaAs/InP heterostructure, we have polished the substrate into a parabolic reflector. We combine optical and thermal measurements to obtain the absolute external efficiency over a wide range of carrier densities. Using a simple model, the measurement is used to determine interface, radiative, and Auger recombination rates in the active material. At the optimal density, the quantum efficiency exceeds 60% at room temperature. The divergence of the emitted light is less than 20°. In fact, the beam profile is dominated by a 6° wide lobe that can be swept across the field of emission by changing the excitation position. This suggests a way to create an all-electronic scanned light beam.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.368790