Efficient directional spontaneous emission from an InGaAs/InP heterostructure with an integral parabolic reflector

In order to increase the radiative efficiency and directivity of spontaneous emission from a lattice-matched InGaAs/InP heterostructure, we have polished the substrate into a parabolic reflector. We combine optical and thermal measurements to obtain the absolute external efficiency over a wide range...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 1998-11, Vol.84 (9), p.5360-5362
Main Authors: Gfroerer, T. H., Cornell, E. A., Wanlass, M. W.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c251t-3665aa95aa066534e34f4007be7e8a72e206f2f1f85a9a318098aea98fb7aef73
cites cdi_FETCH-LOGICAL-c251t-3665aa95aa066534e34f4007be7e8a72e206f2f1f85a9a318098aea98fb7aef73
container_end_page 5362
container_issue 9
container_start_page 5360
container_title Journal of applied physics
container_volume 84
creator Gfroerer, T. H.
Cornell, E. A.
Wanlass, M. W.
description In order to increase the radiative efficiency and directivity of spontaneous emission from a lattice-matched InGaAs/InP heterostructure, we have polished the substrate into a parabolic reflector. We combine optical and thermal measurements to obtain the absolute external efficiency over a wide range of carrier densities. Using a simple model, the measurement is used to determine interface, radiative, and Auger recombination rates in the active material. At the optimal density, the quantum efficiency exceeds 60% at room temperature. The divergence of the emitted light is less than 20°. In fact, the beam profile is dominated by a 6° wide lobe that can be swept across the field of emission by changing the excitation position. This suggests a way to create an all-electronic scanned light beam.
doi_str_mv 10.1063/1.368790
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_368790</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_368790</sourcerecordid><originalsourceid>FETCH-LOGICAL-c251t-3665aa95aa066534e34f4007be7e8a72e206f2f1f85a9a318098aea98fb7aef73</originalsourceid><addsrcrecordid>eNotkEFLAzEQhYMoWKvgT8jRy7aTTXeTHEupdaGgBz0v03ViI9ukJCnivzelHh7zeAzfDI-xRwEzAa2ci5lstTJwxSYCtKlU08A1mwDUotJGmVt2l9I3gBBamgmLa2vd4Mhn_ukiDdkFjyNPx-AzegqnxOngUioxtzEcOHre-Q0u07zzb3xPmWJIOZ6GfIrEf1zen1ecz_QVC-iIEXdhdAOPZMfCD_Ge3VgcEz38zyn7eF6_r16q7eumWy231VA3IleybRtEUwTFyQXJhV0AqB0p0qhqqqG1tRVWN2hQCg1GI6HRdqeQrJJT9nThDuXDVM73x-gOGH97Af25q170l67kH2_hXiY</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Efficient directional spontaneous emission from an InGaAs/InP heterostructure with an integral parabolic reflector</title><source>AIP Digital Archive</source><creator>Gfroerer, T. H. ; Cornell, E. A. ; Wanlass, M. W.</creator><creatorcontrib>Gfroerer, T. H. ; Cornell, E. A. ; Wanlass, M. W.</creatorcontrib><description>In order to increase the radiative efficiency and directivity of spontaneous emission from a lattice-matched InGaAs/InP heterostructure, we have polished the substrate into a parabolic reflector. We combine optical and thermal measurements to obtain the absolute external efficiency over a wide range of carrier densities. Using a simple model, the measurement is used to determine interface, radiative, and Auger recombination rates in the active material. At the optimal density, the quantum efficiency exceeds 60% at room temperature. The divergence of the emitted light is less than 20°. In fact, the beam profile is dominated by a 6° wide lobe that can be swept across the field of emission by changing the excitation position. This suggests a way to create an all-electronic scanned light beam.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.368790</identifier><language>eng</language><ispartof>Journal of applied physics, 1998-11, Vol.84 (9), p.5360-5362</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c251t-3665aa95aa066534e34f4007be7e8a72e206f2f1f85a9a318098aea98fb7aef73</citedby><cites>FETCH-LOGICAL-c251t-3665aa95aa066534e34f4007be7e8a72e206f2f1f85a9a318098aea98fb7aef73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Gfroerer, T. H.</creatorcontrib><creatorcontrib>Cornell, E. A.</creatorcontrib><creatorcontrib>Wanlass, M. W.</creatorcontrib><title>Efficient directional spontaneous emission from an InGaAs/InP heterostructure with an integral parabolic reflector</title><title>Journal of applied physics</title><description>In order to increase the radiative efficiency and directivity of spontaneous emission from a lattice-matched InGaAs/InP heterostructure, we have polished the substrate into a parabolic reflector. We combine optical and thermal measurements to obtain the absolute external efficiency over a wide range of carrier densities. Using a simple model, the measurement is used to determine interface, radiative, and Auger recombination rates in the active material. At the optimal density, the quantum efficiency exceeds 60% at room temperature. The divergence of the emitted light is less than 20°. In fact, the beam profile is dominated by a 6° wide lobe that can be swept across the field of emission by changing the excitation position. This suggests a way to create an all-electronic scanned light beam.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNotkEFLAzEQhYMoWKvgT8jRy7aTTXeTHEupdaGgBz0v03ViI9ukJCnivzelHh7zeAzfDI-xRwEzAa2ci5lstTJwxSYCtKlU08A1mwDUotJGmVt2l9I3gBBamgmLa2vd4Mhn_ukiDdkFjyNPx-AzegqnxOngUioxtzEcOHre-Q0u07zzb3xPmWJIOZ6GfIrEf1zen1ecz_QVC-iIEXdhdAOPZMfCD_Ge3VgcEz38zyn7eF6_r16q7eumWy231VA3IleybRtEUwTFyQXJhV0AqB0p0qhqqqG1tRVWN2hQCg1GI6HRdqeQrJJT9nThDuXDVM73x-gOGH97Af25q170l67kH2_hXiY</recordid><startdate>19981101</startdate><enddate>19981101</enddate><creator>Gfroerer, T. H.</creator><creator>Cornell, E. A.</creator><creator>Wanlass, M. W.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19981101</creationdate><title>Efficient directional spontaneous emission from an InGaAs/InP heterostructure with an integral parabolic reflector</title><author>Gfroerer, T. H. ; Cornell, E. A. ; Wanlass, M. W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c251t-3665aa95aa066534e34f4007be7e8a72e206f2f1f85a9a318098aea98fb7aef73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gfroerer, T. H.</creatorcontrib><creatorcontrib>Cornell, E. A.</creatorcontrib><creatorcontrib>Wanlass, M. W.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gfroerer, T. H.</au><au>Cornell, E. A.</au><au>Wanlass, M. W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Efficient directional spontaneous emission from an InGaAs/InP heterostructure with an integral parabolic reflector</atitle><jtitle>Journal of applied physics</jtitle><date>1998-11-01</date><risdate>1998</risdate><volume>84</volume><issue>9</issue><spage>5360</spage><epage>5362</epage><pages>5360-5362</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>In order to increase the radiative efficiency and directivity of spontaneous emission from a lattice-matched InGaAs/InP heterostructure, we have polished the substrate into a parabolic reflector. We combine optical and thermal measurements to obtain the absolute external efficiency over a wide range of carrier densities. Using a simple model, the measurement is used to determine interface, radiative, and Auger recombination rates in the active material. At the optimal density, the quantum efficiency exceeds 60% at room temperature. The divergence of the emitted light is less than 20°. In fact, the beam profile is dominated by a 6° wide lobe that can be swept across the field of emission by changing the excitation position. This suggests a way to create an all-electronic scanned light beam.</abstract><doi>10.1063/1.368790</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0021-8979
ispartof Journal of applied physics, 1998-11, Vol.84 (9), p.5360-5362
issn 0021-8979
1089-7550
language eng
recordid cdi_crossref_primary_10_1063_1_368790
source AIP Digital Archive
title Efficient directional spontaneous emission from an InGaAs/InP heterostructure with an integral parabolic reflector
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T22%3A26%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Efficient%20directional%20spontaneous%20emission%20from%20an%20InGaAs/InP%20heterostructure%20with%20an%20integral%20parabolic%20reflector&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Gfroerer,%20T.%20H.&rft.date=1998-11-01&rft.volume=84&rft.issue=9&rft.spage=5360&rft.epage=5362&rft.pages=5360-5362&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.368790&rft_dat=%3Ccrossref%3E10_1063_1_368790%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c251t-3665aa95aa066534e34f4007be7e8a72e206f2f1f85a9a318098aea98fb7aef73%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true