Modulation response of tunneling injection laser: Analytical approach

The modulation response of a tunneling injection laser has been studied by an analytic solution of the rate equations taking into account carrier transport effects. The formula for K factor has been derived. We have found that the modulation bandwidth increases when coupling between quantum well and...

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Bibliographic Details
Published in:Journal of applied physics 1998-11, Vol.84 (10), p.5419-5423
Main Authors: Rusek, P., Wartak, M. S., Weetman, P.
Format: Article
Language:English
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Summary:The modulation response of a tunneling injection laser has been studied by an analytic solution of the rate equations taking into account carrier transport effects. The formula for K factor has been derived. We have found that the modulation bandwidth increases when coupling between quantum well and separate confinement increases and that the value of K factor is underestimated in a tunneling injection laser. It indicates that the observed high modulation bandwidth in tunneling injection laser is mostly due to reduction of hot carrier effects.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.368796