Magnetoelectric manipulation of domain wall configuration in thin film Ni/[Pb(Mn 1/3 Nb 2/3 )O 3 ] 0.68 -[PbTiO 3 ] 0.32 (001) heterostructure

This paper reports experimental observations of partial and reversible out-of-plane magnetization change in a thin film Ni/[Pb(Mn 1/3 Nb 2/3 )O 3 ] 0.68 -[PbTiO 3 ] 0.32 (001) heterostructure. Electric-field-induced isotropic in-plane compressive strain (∼1000ppm) eliminates the stripe domain patter...

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Bibliographic Details
Published in:Applied physics letters 2012-02, Vol.100 (9), p.092902-092902-4
Main Authors: Hsu, Chin-Jui, Hockel, Joshua L., Carman, Gregory P.
Format: Article
Language:English
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Summary:This paper reports experimental observations of partial and reversible out-of-plane magnetization change in a thin film Ni/[Pb(Mn 1/3 Nb 2/3 )O 3 ] 0.68 -[PbTiO 3 ] 0.32 (001) heterostructure. Electric-field-induced isotropic in-plane compressive strain (∼1000ppm) eliminates the stripe domain pattern in a 60-nm-thick Ni thin film. When the electric field is removed, the stripe domains are returned to their original configurations with some domain wall pinning perturbations due to ferroelectric domain texturing. The observed domain structure change is attributed to the transition from Bloch wall to Néel wall and the broadening of the Bloch wall. This out-of-plane magnetization change does not occur in thicker (100-nm-thick) Ni thin film.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3690953