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Magnetoelectric manipulation of domain wall configuration in thin film Ni/[Pb(Mn 1/3 Nb 2/3 )O 3 ] 0.68 -[PbTiO 3 ] 0.32 (001) heterostructure
This paper reports experimental observations of partial and reversible out-of-plane magnetization change in a thin film Ni/[Pb(Mn 1/3 Nb 2/3 )O 3 ] 0.68 -[PbTiO 3 ] 0.32 (001) heterostructure. Electric-field-induced isotropic in-plane compressive strain (∼1000ppm) eliminates the stripe domain patter...
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| Published in: | Applied physics letters 2012-02, Vol.100 (9), p.092902-092902-4 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c265t-27e46b6100f3f9a5ca25d7a2bc0bc7a03d8d843d6e7bf62b496384e3d9fb18c23 |
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| cites | cdi_FETCH-LOGICAL-c265t-27e46b6100f3f9a5ca25d7a2bc0bc7a03d8d843d6e7bf62b496384e3d9fb18c23 |
| container_end_page | 092902-4 |
| container_issue | 9 |
| container_start_page | 092902 |
| container_title | Applied physics letters |
| container_volume | 100 |
| creator | Hsu, Chin-Jui Hockel, Joshua L. Carman, Gregory P. |
| description | This paper reports experimental observations of partial and reversible out-of-plane magnetization change in a thin film Ni/[Pb(Mn
1/3
Nb
2/3
)O
3
]
0.68
-[PbTiO
3
]
0.32
(001) heterostructure. Electric-field-induced isotropic in-plane compressive strain (∼1000ppm) eliminates the stripe domain pattern in a 60-nm-thick Ni thin film. When the electric field is removed, the stripe domains are returned to their original configurations with some domain wall pinning perturbations due to ferroelectric domain texturing. The observed domain structure change is attributed to the transition from Bloch wall to Néel wall and the broadening of the Bloch wall. This out-of-plane magnetization change does not occur in thicker (100-nm-thick) Ni thin film. |
| doi_str_mv | 10.1063/1.3690953 |
| format | article |
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1/3
Nb
2/3
)O
3
]
0.68
-[PbTiO
3
]
0.32
(001) heterostructure. Electric-field-induced isotropic in-plane compressive strain (∼1000ppm) eliminates the stripe domain pattern in a 60-nm-thick Ni thin film. When the electric field is removed, the stripe domains are returned to their original configurations with some domain wall pinning perturbations due to ferroelectric domain texturing. The observed domain structure change is attributed to the transition from Bloch wall to Néel wall and the broadening of the Bloch wall. This out-of-plane magnetization change does not occur in thicker (100-nm-thick) Ni thin film.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3690953</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2012-02, Vol.100 (9), p.092902-092902-4</ispartof><rights>2012 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c265t-27e46b6100f3f9a5ca25d7a2bc0bc7a03d8d843d6e7bf62b496384e3d9fb18c23</citedby><cites>FETCH-LOGICAL-c265t-27e46b6100f3f9a5ca25d7a2bc0bc7a03d8d843d6e7bf62b496384e3d9fb18c23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3690953$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,782,784,795,27923,27924,76154</link.rule.ids></links><search><creatorcontrib>Hsu, Chin-Jui</creatorcontrib><creatorcontrib>Hockel, Joshua L.</creatorcontrib><creatorcontrib>Carman, Gregory P.</creatorcontrib><title>Magnetoelectric manipulation of domain wall configuration in thin film Ni/[Pb(Mn 1/3 Nb 2/3 )O 3 ] 0.68 -[PbTiO 3 ] 0.32 (001) heterostructure</title><title>Applied physics letters</title><description>This paper reports experimental observations of partial and reversible out-of-plane magnetization change in a thin film Ni/[Pb(Mn
1/3
Nb
2/3
)O
3
]
0.68
-[PbTiO
3
]
0.32
(001) heterostructure. Electric-field-induced isotropic in-plane compressive strain (∼1000ppm) eliminates the stripe domain pattern in a 60-nm-thick Ni thin film. When the electric field is removed, the stripe domains are returned to their original configurations with some domain wall pinning perturbations due to ferroelectric domain texturing. The observed domain structure change is attributed to the transition from Bloch wall to Néel wall and the broadening of the Bloch wall. This out-of-plane magnetization change does not occur in thicker (100-nm-thick) Ni thin film.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEQhoMoWKsH_0GO7WHbJLOb3b0IUvyCfnioJ5ElySZtZD9KNov4J_zNprZeBC8zzPu-zDAPQteUTCjhMKUT4DnJEzhBA0rSNAJKs1M0IIRAxPOEnqOLrnsPY8IABuhrITaN9q2utPLOKlyLxu76SnjbNrg1uGxrYRv8IaoKq7YxdtO7gxlUvw3F2KrGSzt9fZajRYPpFPBSYhbaeIUBv2Ey4RmOgr22vwIwPCKEjvFWe-3azrte-d7pS3RmRNXpq2Mfopf7u_XsMZqvHp5mt_NIMZ74iKU65pJTQgyYXCRKsKRMBZOKSJUKAmVWZjGUXKfScCbjnEMWayhzI2mmGAzR-LBXheOd06bYOVsL91lQUuxBFrQ4ggzZm0O2U9b_vP5_-A_NYk8TvgFgzHcz</recordid><startdate>20120227</startdate><enddate>20120227</enddate><creator>Hsu, Chin-Jui</creator><creator>Hockel, Joshua L.</creator><creator>Carman, Gregory P.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120227</creationdate><title>Magnetoelectric manipulation of domain wall configuration in thin film Ni/[Pb(Mn 1/3 Nb 2/3 )O 3 ] 0.68 -[PbTiO 3 ] 0.32 (001) heterostructure</title><author>Hsu, Chin-Jui ; Hockel, Joshua L. ; Carman, Gregory P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c265t-27e46b6100f3f9a5ca25d7a2bc0bc7a03d8d843d6e7bf62b496384e3d9fb18c23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hsu, Chin-Jui</creatorcontrib><creatorcontrib>Hockel, Joshua L.</creatorcontrib><creatorcontrib>Carman, Gregory P.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hsu, Chin-Jui</au><au>Hockel, Joshua L.</au><au>Carman, Gregory P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Magnetoelectric manipulation of domain wall configuration in thin film Ni/[Pb(Mn 1/3 Nb 2/3 )O 3 ] 0.68 -[PbTiO 3 ] 0.32 (001) heterostructure</atitle><jtitle>Applied physics letters</jtitle><date>2012-02-27</date><risdate>2012</risdate><volume>100</volume><issue>9</issue><spage>092902</spage><epage>092902-4</epage><pages>092902-092902-4</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>This paper reports experimental observations of partial and reversible out-of-plane magnetization change in a thin film Ni/[Pb(Mn
1/3
Nb
2/3
)O
3
]
0.68
-[PbTiO
3
]
0.32
(001) heterostructure. Electric-field-induced isotropic in-plane compressive strain (∼1000ppm) eliminates the stripe domain pattern in a 60-nm-thick Ni thin film. When the electric field is removed, the stripe domains are returned to their original configurations with some domain wall pinning perturbations due to ferroelectric domain texturing. The observed domain structure change is attributed to the transition from Bloch wall to Néel wall and the broadening of the Bloch wall. This out-of-plane magnetization change does not occur in thicker (100-nm-thick) Ni thin film.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3690953</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2012-02, Vol.100 (9), p.092902-092902-4 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3690953 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP Journals (American Institute of Physics) |
| title | Magnetoelectric manipulation of domain wall configuration in thin film Ni/[Pb(Mn 1/3 Nb 2/3 )O 3 ] 0.68 -[PbTiO 3 ] 0.32 (001) heterostructure |
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