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Effect of crystallographic anisotropy on the resistance switching phenomenon in perovskites

Resistance switching effects in metal/perovskite contacts based on epitaxial c-axis oriented YBa 2 Cu 3 O 6+c (YBCO) thin films with different crystallographic orientation have been studied. Three types of Ag/YBCO junctions with the contact restricted to (i) c-axis direction, (ii) ab-plane direction...

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Bibliographic Details
Published in:Journal of applied physics 2012-03, Vol.111 (5), p.056106-056106-3
Main Authors: Plecenik, T., Tomášek, M., Belogolovskii, M., Truchly, M., Gregor, M., Noskovič, J., Zahoran, M., Roch, T., Boylo, I., Španková, M., Chromik, Š., Kúš, P., Plecenik, A.
Format: Article
Language:English
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Summary:Resistance switching effects in metal/perovskite contacts based on epitaxial c-axis oriented YBa 2 Cu 3 O 6+c (YBCO) thin films with different crystallographic orientation have been studied. Three types of Ag/YBCO junctions with the contact restricted to (i) c-axis direction, (ii) ab-plane direction, and (iii) both were designed and fabricated, and their current-voltage characteristics have been measured. The type (i) junctions exhibited conventional bipolar resistance switching behavior, whereas in other two types the low-resistance state was unsteady and their resistance quickly relaxed to the initial high-resistance state. Physical mechanism based on the oxygen diffusion scenario, explaining such behavior, is discussed.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3691598