Fabrication of Co/Si nanowires by ultrahigh-vacuum scanning tunneling microscopy on hydrogen-passivated Si(100) surfaces

We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scanning tunneling microscopy (UHVSTM) based nanolithography on the hydrogen-passivated surface, combined with vapor deposition of Co at room temperature and subsequent annealing. The STM tip was used to def...

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Bibliographic Details
Published in:Journal of applied physics 1999-02, Vol.85 (3), p.1907-1910
Main Authors: Palasantzas, G., Ilge, B., De Nijs, J., Geerligs, L. J.
Format: Article
Language:English
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Summary:We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scanning tunneling microscopy (UHVSTM) based nanolithography on the hydrogen-passivated surface, combined with vapor deposition of Co at room temperature and subsequent annealing. The STM tip was used to define depassivated lines (
ISSN:0021-8979
1089-7550
DOI:10.1063/1.369171