Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes

In this letter, we experimentally demonstrate direct correlation between efficiency droop and carrier overflow in InGaN/GaN green light emitting diodes (LEDs). Further, we demonstrate flat external quantum efficiency curve up to 400A/cm 2 in a plasma assisted molecular beam epitaxy grown N-polar dou...

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Bibliographic Details
Published in:Applied physics letters 2012-03, Vol.100 (11), p.111118-111118-4
Main Authors: Akyol, F., Nath, D. N., Krishnamoorthy, S., Park, P. S., Rajan, S.
Format: Article
Language:English
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Summary:In this letter, we experimentally demonstrate direct correlation between efficiency droop and carrier overflow in InGaN/GaN green light emitting diodes (LEDs). Further, we demonstrate flat external quantum efficiency curve up to 400A/cm 2 in a plasma assisted molecular beam epitaxy grown N-polar double quantum well LED without electron blocking layers. This is achieved by exploring the superior properties of reverse polarization field of N-face polarity, such as effective carrier injection and higher potential barriers against carrier overflow mechanism. The LEDs were found to operate with a low (∼2.3V) turn-on voltage.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3694967