Identification of the nature of platinum related midgap state in silicon by deep level transient spectroscopy

In this article, we present the detailed investigations on platinum related midgap state corresponding to Ec−0.52 eV probed by deep level transient spectroscopy. By irradiating the platinum doped samples with high-energy (1.1 MeV) gamma rays, we observed that the concentration of the midgap state in...

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Bibliographic Details
Published in:Journal of applied physics 1999-02, Vol.85 (4), p.2175-2178
Main Authors: Rao, K. S. R. K., Rangaiah, S. V. Pandu, Reddy, P. N., Reddy, B. P. N.
Format: Article
Language:English
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Summary:In this article, we present the detailed investigations on platinum related midgap state corresponding to Ec−0.52 eV probed by deep level transient spectroscopy. By irradiating the platinum doped samples with high-energy (1.1 MeV) gamma rays, we observed that the concentration of the midgap state increases and follows a square dependence with irradiation dose. However, the concentration of the acceptor corresponding to Ec−0.28 eV remained constant. Furthermore, from the studies on passivation by atomic hydrogen and thermal reactivation, we noticed that the Ec−0.52 eV level reappears in the samples annealed at high temperatures after hydrogenation. The interaction of platinum with various defects and the qualitative arguments based on the law of mass action suggest that the platinum related midgap defect might possibly correspond to the interstitial platinum-divacancy complex (V–Pt–V).
ISSN:0021-8979
1089-7550
DOI:10.1063/1.369523