Structural dependence of combustion-flame synthesized diamond films on substrate temperatures

• Published in: Journal of applied physics 1999-04, Vol.85 (7), p.3609-3613
• Main Authors: Takahashi, Hiroaki, Després, Jean-François, Odawara, Osamu
• Format: Article
• Language: English
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.369722

Structural changes of diamond film surfaces deposited by a combustion-flame method have been investigated with varying temperatures of the substrates made of Mo, Si, and W. The crystal faces of the deposited diamonds have changed from {111} to {100} with increasing substrate temperatures. The appearance of the {100} faces occurred at around 1200 K for the Mo substrate, and at around 1100 K when using the Si or W substrate. Raman peaks of the diamond deposited below 1400 K and the sample deposited at 1400 K on W substrate present a splitting line shape, which indicates a presence of anisotropic stresses in the crystals. However, when deposited above 1400 K and the sample at 1400 K on Mo substrate, no splitting peak existed, which means no anisotropic stresses remained. The results suggest that the peak splitting can be correlated to crystal shapes and anisotropic intrinsic stresses induced by growth defects.