Modulation of effective Schottky barrier height of nickel silicide on silicon using pre-silicide ammonium sulfide treatment

Modulation of effective electron Schottky Barrier Height (Φ B n, eff ) by sulfur (S) donor-like traps was achieved through the use of pre-silicide ammonium sulfide treatment. The mechanisms responsible for the reduction of Φ B n, eff were elucidated through an analysis of current-voltage measurement...

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Bibliographic Details
Published in:Journal of applied physics 2012-04, Vol.111 (7), p.073705-073705-5
Main Authors: Lim, Phyllis S. Y., Zhi Chi, Dong, Chong Lim, Poh, Yeo, Yee-Chia
Format: Article
Language:English
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Summary:Modulation of effective electron Schottky Barrier Height (Φ B n, eff ) by sulfur (S) donor-like traps was achieved through the use of pre-silicide ammonium sulfide treatment. The mechanisms responsible for the reduction of Φ B n, eff were elucidated through an analysis of current-voltage measurements taken at various temperatures. Owing to the different physical locations of the S donor-like traps near the metal/semiconductor junction, e.g., at the interface and in the depletion region, mechanisms such as trap-assisted tunneling (TAT) and generation of electron-hole pairs can participate in the carrier transport, and be more dominant in the low temperature regime for reducing Φ B n, eff .
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3700224