Modification of the electrical properties of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) upon doping of ZnO nanoparticles of different content

A photocurrent decay model is presented that addresses the charge trapping and doping mechanisms for composite poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) films having ZnO nanoparticles of different contents. It is shown that ZnO doping introduced changes in the...

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Bibliographic Details
Published in:Journal of applied physics 2012-04, Vol.111 (7), p.073712-073712-5
Main Authors: Lin, Yow-Jon, Su, Yu-Chao
Format: Article
Language:English
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Summary:A photocurrent decay model is presented that addresses the charge trapping and doping mechanisms for composite poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) films having ZnO nanoparticles of different contents. It is shown that ZnO doping introduced changes in the chemical structure of PEDOT:PSS. Dark current proportional to ZnO doping was observed. For n-type Si/ZnO-doped PEDOT:PSS devices, the high photocurrent density originates from efficient hole transport combined with long-lifetime electron trapping.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3702446