Simulation of ZnSe-based self-electro-optic effect devices

We present computer simulations of self-electro-optic effect devices in different circuit environments, based on the quantum confined Stark effect in wide-gap materials with strong excitonic features. Our work is founded on a microscopic model of the electric field dependent absorption in ZnCdSe/ZnS...

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Bibliographic Details
Published in:Journal of applied physics 1999-05, Vol.85 (10), p.7051-7058
Main Authors: Merbach, D., Schöll, E., Gutowski, J.
Format: Article
Language:English
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Summary:We present computer simulations of self-electro-optic effect devices in different circuit environments, based on the quantum confined Stark effect in wide-gap materials with strong excitonic features. Our work is founded on a microscopic model of the electric field dependent absorption in ZnCdSe/ZnSSe quantum well structures, taking full account of Coulomb induced intersubband coupling and strong excitonic effects, which is essential for all wide-gap materials and distinguishes our theory from standard models of III–V compounds. Optical bistability and even multistability are predicted from the electro-optical and optical input–output characteristics for a wide range of operating conditions. The dependence upon the optical frequency, bias voltage, length of the waveguide and quantum well width, and possible optimization of the performance of the electro-optic modulator are discussed.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.370511