Crystallization behavior of sputter-deposited amorphous Ge2Sb2Te5 thin films

The crystallization behavior of amorphous Ge2Sb2Te5 thin films were investigated by using differential scanning calorimetry, x-ray diffraction, and optical reflectivity measurements. The analysis of in situ ellipsometry isotherm Ge2Sb2Te5 films based on the Johnson–Mehl–Avrami equation revealed that...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 1999-07, Vol.86 (2), p.774-778
Main Authors: Jeong, Tae H., Kim, Myong R., Seo, Hun, Kim, Sang J., Kim, Sang Y.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The crystallization behavior of amorphous Ge2Sb2Te5 thin films were investigated by using differential scanning calorimetry, x-ray diffraction, and optical reflectivity measurements. The analysis of in situ ellipsometry isotherm Ge2Sb2Te5 films based on the Johnson–Mehl–Avrami equation revealed that the crystallization process near 150 °C was a two-step process. In this alloy thin film, the kinetic exponents in the Johnson–Mehl–Avrami equation were about 4.4 for the first stage and 1.1 for the second stage. A kinetic model based on the cascaded crystallization is proposed. The proposed model showed good agreement with the experimental results obtained by transmission electron microscopy and x-ray diffraction.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.370803