Measurement of porous silicon thermal conductivity by micro-Raman scattering

We present a noncontact and nondestructive method to measure thermal conductivity in layered materials using micro-Raman scattering. This method was successfully applied to monocrystalline silicon whose thermal conductivity was found to be 63 W/m K at about 550 °C and then applied to porous silicon...

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Bibliographic Details
Published in:Journal of applied physics 1999-10, Vol.86 (8), p.4700-4702
Main Authors: Périchon, S., Lysenko, V., Remaki, B., Barbier, D., Champagnon, B.
Format: Article
Language:English
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Summary:We present a noncontact and nondestructive method to measure thermal conductivity in layered materials using micro-Raman scattering. This method was successfully applied to monocrystalline silicon whose thermal conductivity was found to be 63 W/m K at about 550 °C and then applied to porous silicon layers. For a 50 μm thick layer with 50% porosity, we found a thermal conductivity of 1 W/m K confirming the thermal insulating properties of this material.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.371424