Loading…

Resistance of a domain wall in La0.7Ca0.3MnO3

Although colossal magnetoresistance (CMR) materials exhibit large changes in electrical resistance (up to 106%), large magnetic fields (several tesla) must be applied. To obtain a sizeable low-field effect (

Saved in:
Bibliographic Details
Published in:Journal of applied physics 1999-12, Vol.86 (11), p.6287-6290
Main Authors: Mathur, N. D., Littlewood, P. B., Todd, N. K., Isaac, S. P., Teo, B.-S., Kang, D.-J., Tarte, E. J., Barber, Z. H., Evetts, J. E., Blamire, M. G.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c291t-690a4863349e2e3ec3f548adbc918f0351efa1e468e40b46297b0a0d1b5d84773
cites cdi_FETCH-LOGICAL-c291t-690a4863349e2e3ec3f548adbc918f0351efa1e468e40b46297b0a0d1b5d84773
container_end_page 6290
container_issue 11
container_start_page 6287
container_title Journal of applied physics
container_volume 86
creator Mathur, N. D.
Littlewood, P. B.
Todd, N. K.
Isaac, S. P.
Teo, B.-S.
Kang, D.-J.
Tarte, E. J.
Barber, Z. H.
Evetts, J. E.
Blamire, M. G.
description Although colossal magnetoresistance (CMR) materials exhibit large changes in electrical resistance (up to 106%), large magnetic fields (several tesla) must be applied. To obtain a sizeable low-field effect (
doi_str_mv 10.1063/1.371687
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_371687</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_371687</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-690a4863349e2e3ec3f548adbc918f0351efa1e468e40b46297b0a0d1b5d84773</originalsourceid><addsrcrecordid>eNotj8tKxEAQAAdRMK6CnzBHLxO70_M8SlBXiCyInkMnmYFINpHMgvj3rqyXqltBCXGLUCJYuseSHFrvzkSB4INyxsC5KAAqVD64cCmucv4EQPQUCqHeYh7zgec-yiVJlsOy53GW3zxN8uiGoXT1EfQ67-haXCSecrz590Z8PD2-11vV7J5f6odG9VXAg7IBWHtLpEOsIsWektGeh64P6BOQwZgYo7Y-aui0rYLrgGHAzgxeO0cbcXfq9uuS8xpT-7WOe15_WoT2b7PF9rRJv7FhQNw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Resistance of a domain wall in La0.7Ca0.3MnO3</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Mathur, N. D. ; Littlewood, P. B. ; Todd, N. K. ; Isaac, S. P. ; Teo, B.-S. ; Kang, D.-J. ; Tarte, E. J. ; Barber, Z. H. ; Evetts, J. E. ; Blamire, M. G.</creator><creatorcontrib>Mathur, N. D. ; Littlewood, P. B. ; Todd, N. K. ; Isaac, S. P. ; Teo, B.-S. ; Kang, D.-J. ; Tarte, E. J. ; Barber, Z. H. ; Evetts, J. E. ; Blamire, M. G.</creatorcontrib><description>Although colossal magnetoresistance (CMR) materials exhibit large changes in electrical resistance (up to 106%), large magnetic fields (several tesla) must be applied. To obtain a sizeable low-field effect (&lt;102% in several millitesla), it is necessary to incorporate structural discontinuities such as grain boundaries, or other types of interfaces. The potential for applications, however, remains limited because structural discontinuities increase electrical resistance by several orders of magnitude and hence create noise. Moreover, it has proven to be difficult to fabricate structural discontinuities reproducibly. We have attempted to investigate discontinuities that are purely magnetic via transport measurements through a precisely controlled number of magnetic domain walls of known area in thin film devices of the ferromagnetic CMR perovskite La0.7Ca0.3MnO3. A sharp low-field switching seen below ∼110 K is ascribed to the formation of a precise number of magnetic domain walls, each with resistance-area product 8×10−14 Ω m2 at 77 K. This is four orders of magnitude larger than expected, suggesting that the domain walls contain an additional structure. Our findings demonstrate that CMR devices are capable of low-noise low-field switching, and suggest the possibility of exploiting a hitherto unexpected intrinsic effect reproducibly and therefore commercially.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.371687</identifier><language>eng</language><ispartof>Journal of applied physics, 1999-12, Vol.86 (11), p.6287-6290</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-690a4863349e2e3ec3f548adbc918f0351efa1e468e40b46297b0a0d1b5d84773</citedby><cites>FETCH-LOGICAL-c291t-690a4863349e2e3ec3f548adbc918f0351efa1e468e40b46297b0a0d1b5d84773</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Mathur, N. D.</creatorcontrib><creatorcontrib>Littlewood, P. B.</creatorcontrib><creatorcontrib>Todd, N. K.</creatorcontrib><creatorcontrib>Isaac, S. P.</creatorcontrib><creatorcontrib>Teo, B.-S.</creatorcontrib><creatorcontrib>Kang, D.-J.</creatorcontrib><creatorcontrib>Tarte, E. J.</creatorcontrib><creatorcontrib>Barber, Z. H.</creatorcontrib><creatorcontrib>Evetts, J. E.</creatorcontrib><creatorcontrib>Blamire, M. G.</creatorcontrib><title>Resistance of a domain wall in La0.7Ca0.3MnO3</title><title>Journal of applied physics</title><description>Although colossal magnetoresistance (CMR) materials exhibit large changes in electrical resistance (up to 106%), large magnetic fields (several tesla) must be applied. To obtain a sizeable low-field effect (&lt;102% in several millitesla), it is necessary to incorporate structural discontinuities such as grain boundaries, or other types of interfaces. The potential for applications, however, remains limited because structural discontinuities increase electrical resistance by several orders of magnitude and hence create noise. Moreover, it has proven to be difficult to fabricate structural discontinuities reproducibly. We have attempted to investigate discontinuities that are purely magnetic via transport measurements through a precisely controlled number of magnetic domain walls of known area in thin film devices of the ferromagnetic CMR perovskite La0.7Ca0.3MnO3. A sharp low-field switching seen below ∼110 K is ascribed to the formation of a precise number of magnetic domain walls, each with resistance-area product 8×10−14 Ω m2 at 77 K. This is four orders of magnitude larger than expected, suggesting that the domain walls contain an additional structure. Our findings demonstrate that CMR devices are capable of low-noise low-field switching, and suggest the possibility of exploiting a hitherto unexpected intrinsic effect reproducibly and therefore commercially.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNotj8tKxEAQAAdRMK6CnzBHLxO70_M8SlBXiCyInkMnmYFINpHMgvj3rqyXqltBCXGLUCJYuseSHFrvzkSB4INyxsC5KAAqVD64cCmucv4EQPQUCqHeYh7zgec-yiVJlsOy53GW3zxN8uiGoXT1EfQ67-haXCSecrz590Z8PD2-11vV7J5f6odG9VXAg7IBWHtLpEOsIsWektGeh64P6BOQwZgYo7Y-aui0rYLrgGHAzgxeO0cbcXfq9uuS8xpT-7WOe15_WoT2b7PF9rRJv7FhQNw</recordid><startdate>19991201</startdate><enddate>19991201</enddate><creator>Mathur, N. D.</creator><creator>Littlewood, P. B.</creator><creator>Todd, N. K.</creator><creator>Isaac, S. P.</creator><creator>Teo, B.-S.</creator><creator>Kang, D.-J.</creator><creator>Tarte, E. J.</creator><creator>Barber, Z. H.</creator><creator>Evetts, J. E.</creator><creator>Blamire, M. G.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19991201</creationdate><title>Resistance of a domain wall in La0.7Ca0.3MnO3</title><author>Mathur, N. D. ; Littlewood, P. B. ; Todd, N. K. ; Isaac, S. P. ; Teo, B.-S. ; Kang, D.-J. ; Tarte, E. J. ; Barber, Z. H. ; Evetts, J. E. ; Blamire, M. G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-690a4863349e2e3ec3f548adbc918f0351efa1e468e40b46297b0a0d1b5d84773</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mathur, N. D.</creatorcontrib><creatorcontrib>Littlewood, P. B.</creatorcontrib><creatorcontrib>Todd, N. K.</creatorcontrib><creatorcontrib>Isaac, S. P.</creatorcontrib><creatorcontrib>Teo, B.-S.</creatorcontrib><creatorcontrib>Kang, D.-J.</creatorcontrib><creatorcontrib>Tarte, E. J.</creatorcontrib><creatorcontrib>Barber, Z. H.</creatorcontrib><creatorcontrib>Evetts, J. E.</creatorcontrib><creatorcontrib>Blamire, M. G.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mathur, N. D.</au><au>Littlewood, P. B.</au><au>Todd, N. K.</au><au>Isaac, S. P.</au><au>Teo, B.-S.</au><au>Kang, D.-J.</au><au>Tarte, E. J.</au><au>Barber, Z. H.</au><au>Evetts, J. E.</au><au>Blamire, M. G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Resistance of a domain wall in La0.7Ca0.3MnO3</atitle><jtitle>Journal of applied physics</jtitle><date>1999-12-01</date><risdate>1999</risdate><volume>86</volume><issue>11</issue><spage>6287</spage><epage>6290</epage><pages>6287-6290</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>Although colossal magnetoresistance (CMR) materials exhibit large changes in electrical resistance (up to 106%), large magnetic fields (several tesla) must be applied. To obtain a sizeable low-field effect (&lt;102% in several millitesla), it is necessary to incorporate structural discontinuities such as grain boundaries, or other types of interfaces. The potential for applications, however, remains limited because structural discontinuities increase electrical resistance by several orders of magnitude and hence create noise. Moreover, it has proven to be difficult to fabricate structural discontinuities reproducibly. We have attempted to investigate discontinuities that are purely magnetic via transport measurements through a precisely controlled number of magnetic domain walls of known area in thin film devices of the ferromagnetic CMR perovskite La0.7Ca0.3MnO3. A sharp low-field switching seen below ∼110 K is ascribed to the formation of a precise number of magnetic domain walls, each with resistance-area product 8×10−14 Ω m2 at 77 K. This is four orders of magnitude larger than expected, suggesting that the domain walls contain an additional structure. Our findings demonstrate that CMR devices are capable of low-noise low-field switching, and suggest the possibility of exploiting a hitherto unexpected intrinsic effect reproducibly and therefore commercially.</abstract><doi>10.1063/1.371687</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0021-8979
ispartof Journal of applied physics, 1999-12, Vol.86 (11), p.6287-6290
issn 0021-8979
1089-7550
language eng
recordid cdi_crossref_primary_10_1063_1_371687
source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
title Resistance of a domain wall in La0.7Ca0.3MnO3
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T00%3A13%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Resistance%20of%20a%20domain%20wall%20in%20La0.7Ca0.3MnO3&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Mathur,%20N.%20D.&rft.date=1999-12-01&rft.volume=86&rft.issue=11&rft.spage=6287&rft.epage=6290&rft.pages=6287-6290&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.371687&rft_dat=%3Ccrossref%3E10_1063_1_371687%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c291t-690a4863349e2e3ec3f548adbc918f0351efa1e468e40b46297b0a0d1b5d84773%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true