Photoionization of deep centers in Al2O3

The optical threshold energies for photoionization of several different electron traps in Al2O3 have been determined using photoconductivity and optically stimulated luminescence (OSL). Stimulation of the photoconductivity and OSL is observed over a wide range of optical energies. The localized trap...

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Bibliographic Details
Published in:Journal of applied physics 2000-01, Vol.87 (1), p.249-256
Main Authors: Whitley, Von H., McKeever, S. W. S.
Format: Article
Language:English
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Summary:The optical threshold energies for photoionization of several different electron traps in Al2O3 have been determined using photoconductivity and optically stimulated luminescence (OSL). Stimulation of the photoconductivity and OSL is observed over a wide range of optical energies. The localized trapping states giving rise to the signals are found to be distributed in energy over a wide energy range, with major distributions between 1.7 and 2.5, 3.0 and 3.8, and 3.8 and 4.9 eV. From annealing measurements we show that the lowest energy distribution (1.7–2.5 eV) correlates with the thermoluminescence and thermally stimulated conductivity signals appearing in the temperature range of 400–500 K. The annealing measurements show that these traps contribute >90% of the OSL signal.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.371853