Wide angle distributed Bragg reflectors for 590 nm amber AlGaInP light-emitting diodes

A structure for high brightness light-emitting diodes (LEDs) is demonstrated. A distributed Bragg reflector (DBR) is used to enhance the quantum efficiency of the LEDs. This unique DBR uses a composite structure that consists of two DBRs to provide both high reflectivity and wide angle reflection. F...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2000-02, Vol.87 (4), p.2052-2054
Main Authors: Chiou, S. W., Lee, C. P., Huang, C. K., Chen, C. W.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A structure for high brightness light-emitting diodes (LEDs) is demonstrated. A distributed Bragg reflector (DBR) is used to enhance the quantum efficiency of the LEDs. This unique DBR uses a composite structure that consists of two DBRs to provide both high reflectivity and wide angle reflection. For 590 nm (amber range) AlGaInP LEDs, the quantum efficiency is increased to 5.05% by using this composite DBR structure. This result is much better than those obtained from conventional DBRs, and is comparable to that of wafer bonded AlGaInP LEDs.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.372135