Effect of electron–hole interaction on electron spin relaxation in GaAs/AlGaAs quantum wells at room temperature

We investigated electron spin relaxation with respect to the spatial electron–hole separation in GaAs/AlGaAs quantum wells at room temperature. The polarization dependent time-resolved photoluminescence method was used to measure the electron spin relaxation time by applying an electric field perpen...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2000-04, Vol.87 (7), p.3394-3398
Main Authors: Gotoh, H., Ando, H., Sogawa, T., Kamada, H., Kagawa, T., Iwamura, H.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We investigated electron spin relaxation with respect to the spatial electron–hole separation in GaAs/AlGaAs quantum wells at room temperature. The polarization dependent time-resolved photoluminescence method was used to measure the electron spin relaxation time by applying an electric field perpendicular to the quantum wells. The spin relaxation time had a strong electric field dependence and largely increased with an increase in the spatial electron–hole separation. These results cannot be explained by only the D’yakonov–Perel process, which has often been considered the cause of spin relaxation. We discuss the possible mechanisms that cause the spin relaxation by taking into account the electron–hole exchange interaction.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.372356