Enhanced robustness and tunnel magnetoresistance in artificial ferrimagnet based tunnel junctions

Magnetic tunnel junctions have been fabricated, that use Co/Ru/Co and Co/Ru/CoFe artificial ferrimagnet (AFi) systems as hard magnetic electrodes. The ∼22% tunnel magnetoresistance signal obtained, at room temperature, for junctions with Co/Ru/Co was increased to ∼30% by taking advantage of the high...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2000-05, Vol.87 (9), p.4685-4687
Main Authors: Dimopoulos, T., Tiusan, C., Ounadjela, K., Hehn, M., van den Berg, H. A. M., Henry, Y., da Costa, V.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Magnetic tunnel junctions have been fabricated, that use Co/Ru/Co and Co/Ru/CoFe artificial ferrimagnet (AFi) systems as hard magnetic electrodes. The ∼22% tunnel magnetoresistance signal obtained, at room temperature, for junctions with Co/Ru/Co was increased to ∼30% by taking advantage of the higher spin polarization of CoFe in contact with the barrier. Along with this improvement, a different reversal behavior for the AFi was obtained. Together with the enhanced thermal stability, up to 350 °C, of the junctions involving the Co/Ru/CoFe system potential use as magnetic sensors is discussed.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.373130