Structural and photoluminescence properties of In0.9(Ga/Al)0.1As self-assembled quantum dots on InP substrate

Self-assembled In0.9Ga0.1As, In0.9Al0.1As, and InAs quantum dots (QD) were fabricated in an InAlAs matrix lattice-matched to an InP substrate by molecular beam epitaxy. Preliminary characterizations were performed using transmission electron microscopy, photoluminescence, and reflection high-energy...

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Bibliographic Details
Published in:Journal of applied physics 2000-07, Vol.88 (1), p.533-536
Main Authors: Zhong-zhe, Sun, Ju, Wu, Feng-qi, Liu, Huai-zhe, Xu, Yong-hai, Chen, Xiao-ling, Ye, Wei-hong, Jiang, Bo, Xu, Zhan-guo, Wang
Format: Article
Language:English
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Summary:Self-assembled In0.9Ga0.1As, In0.9Al0.1As, and InAs quantum dots (QD) were fabricated in an InAlAs matrix lattice-matched to an InP substrate by molecular beam epitaxy. Preliminary characterizations were performed using transmission electron microscopy, photoluminescence, and reflection high-energy electron diffraction. Experimental results reveal clear differences in QD formation, size distribution, and luminescence between the InAs and In0.9(Ga/Al)0.1As samples, which show the potential of introducing ternary compositions to adjust the structural and optical properties of QDs on an InP substrate.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.373691