Applied voltage effect on the electron delocalization of excited Ce3+ in SrS:Ce electroluminescent devices

The electro-optical behavior of SrS:Ce atomic layer epitaxy thin films electroluminescent devices with Ce3+ ions in different point symmetries is analyzed. Under selective photonic excitation in the lower absorption band and for voltage below the EL threshold, it is shown that the delocalization pro...

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Bibliographic Details
Published in:Journal of applied physics 2000-07, Vol.88 (2), p.1061-1066
Main Authors: Barthou, C., Benoit, J., Benalloul, P., Polamo, K., Soininen, E.
Format: Article
Language:English
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Summary:The electro-optical behavior of SrS:Ce atomic layer epitaxy thin films electroluminescent devices with Ce3+ ions in different point symmetries is analyzed. Under selective photonic excitation in the lower absorption band and for voltage below the EL threshold, it is shown that the delocalization probability of Ce3+ excited ions is much lower for Ce3+ ions in octahedral sites than in lower symmetry ones.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.373777