Basic properties of GaAs oxide generated by scanning probe microscope tip-induced nano-oxidation process

The basic properties of GaAs oxide generated by atomic force microscope (AFM) tip-induced nano-oxidation process have been investigated. The chemical analysis of the AFM tip-generated GaAs oxide was performed by using scanning microprobe x-ray photoelectron spectroscopy, and the main constituents of...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2000-07, Vol.88 (2), p.1136-1140
Main Authors: Okada, Yoshitaka, Iuchi, Yoshimasa, Kawabe, Mitsuo, Harris, James S.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The basic properties of GaAs oxide generated by atomic force microscope (AFM) tip-induced nano-oxidation process have been investigated. The chemical analysis of the AFM tip-generated GaAs oxide was performed by using scanning microprobe x-ray photoelectron spectroscopy, and the main constituents of GaAs anodic oxide were determined to be Ga2O3 and As2O3. The electrical characterization showed that the electron transport across a GaAs oxide nanodot of ∼5.7 nm thickness, from a doped n+-Si tip into the n+-GaAs substrate follows the Fowler–Nordheim tunneling mechanism over a range of applied bias. Further, the tip-generated GaAs oxide nanodots were found to withstand moderate thermal treatments, but some volume reduction was observed.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.373788