d carrier induced intrinsic room temperature ferromagnetism in Nb:TiO2 film

High crystalline anatase TiO2 and Nb:TiO2 thin films were fabricated on LaAlO3 (100) substrates by pulsed laser deposition. Room temperature ferromagnetism was obtained in Nb:TiO2 but absent in pure TiO2. The Kondo effect and anomalous Hall effect observed in metallic Nb:TiO2 strongly confirmed the...

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Published in:Applied physics letters 2012-05, Vol.100 (20)
Main Authors: Yang, J. Y., Han, Y. L., He, L., Dou, R. F., Xiong, C. M., Nie, J. C.
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Language:English
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cited_by cdi_FETCH-LOGICAL-c159t-226977b57d10d4ad5ff4ed25951be2290c0b6809d23e7e084bce57e0d37473413
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container_issue 20
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container_title Applied physics letters
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creator Yang, J. Y.
Han, Y. L.
He, L.
Dou, R. F.
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Nie, J. C.
description High crystalline anatase TiO2 and Nb:TiO2 thin films were fabricated on LaAlO3 (100) substrates by pulsed laser deposition. Room temperature ferromagnetism was obtained in Nb:TiO2 but absent in pure TiO2. The Kondo effect and anomalous Hall effect observed in metallic Nb:TiO2 strongly confirmed the existence of exchange interaction between intrinsic local magnetic moments and carriers. High energy resolution x-ray photoelectron spectroscopy studies of the Nb:TiO2 thin film revealed clear signals of Ti3+ and Nb4+ ions, which had one unpaired d electron responsible for the local magnetic moments. This result consisted quite well with the spin polarized first principle calculation.
doi_str_mv 10.1063/1.4707378
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title d carrier induced intrinsic room temperature ferromagnetism in Nb:TiO2 film
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