Shift of Ag diffusion profiles in CdTe by metal/semiconductor interfaces

Metal layers deposited on the surface of the semiconductor CdTe effect a shift of the concentration profile of Ag dopants in CdTe by several 100 μ m during diffusion anneal at about 550K. Radio-tracer experiments using 111 Ag show that this effect occurs in the case of Al, Ni, Cu, and Au layers. A p...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2012-04, Vol.100 (17), p.171915-171915-3
Main Authors: Wolf, H., Kronenberg, J., Wagner, F., Deicher, M., Wichert, Th
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Metal layers deposited on the surface of the semiconductor CdTe effect a shift of the concentration profile of Ag dopants in CdTe by several 100 μ m during diffusion anneal at about 550K. Radio-tracer experiments using 111 Ag show that this effect occurs in the case of Al, Ni, Cu, and Au layers. A preliminary explanation relates the effect to an enhancement of the diffusion of Ag atoms in CdTe caused by Cd self-interstitials that are generated at the metal/semiconductor interface.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4709393