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Interface trap generation and recovery mechanisms during and after positive bias stress in metal-oxide-semiconductor structures
Interface trap ( N it ) generation and their partial recovery during and after cessation of the positive bias-temperature stress (PBTS) in n -type metal-oxide-semiconductor capacitors have been investigated. The analysis of experimental results indicates that N it creation is caused by the depassiva...
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| Published in: | Applied physics letters 2012-05, Vol.100 (20), p.203503-203503-4 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c350t-6a2b0d028b6c63d28829fe317c267c1021dec6dca43f8c11365d6352918701fc3 |
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| cites | cdi_FETCH-LOGICAL-c350t-6a2b0d028b6c63d28829fe317c267c1021dec6dca43f8c11365d6352918701fc3 |
| container_end_page | 203503-4 |
| container_issue | 20 |
| container_start_page | 203503 |
| container_title | Applied physics letters |
| container_volume | 100 |
| creator | Samanta, Piyas Huang, Heng-Sheng Chen, Shuang-Yuan Tzeng, Tsung-Jian Wang, Mu-Chun |
| description | Interface trap (
N
it
) generation and their partial recovery during and after cessation of the positive bias-temperature stress (PBTS) in
n
-type metal-oxide-semiconductor capacitors have been investigated. The analysis of experimental results indicates that
N
it
creation is caused by the depassivation of
Si
3
≡
Si
-
H
bonds at the Si/SiO
2
interface by the atomic neutral hydrogen (H
0
) cracked via electron impact at or near gate/oxide interface during electron injection from the substrate.
N
it
recovery after interruption of the stress is due to back diffusion of H
2
species toward the Si/SiO
2
interface and repassivation of
Si
3
≡
Si
*
dangling bonds. We propose that in absence of holes, a modified one dimensional reaction-diffusion (R-D) model following three step degradation sequences can qualitatively explain the generation and the recovery of
N
it
during and after PBTS. |
| doi_str_mv | 10.1063/1.4711216 |
| format | article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_4711216</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c350t-6a2b0d028b6c63d28829fe317c267c1021dec6dca43f8c11365d6352918701fc3</originalsourceid><addsrcrecordid>eNp1kLtOAzEQRS0EEiFQ8AduKTZ47Kx30yChiEekSDRQr5zxbDDK2pHtRKTi19k8REc1M7rnTnEYuwUxAqHVPYzGFYAEfcYGIKqqUAD1ORsIIVShJyVcsquUvvqzlEoN2M_MZ4qtQeI5mjVfkqdosgueG295JAxbijveEX4a71KXuN1E55eH2LR9ma9DctltiS-cSTzlSClx5_tONqsifDtLRaLOYfB2gznEPdMvmx68ZhetWSW6Oc0h-3h-ep--FvO3l9n0cV6gKkUutJELYYWsFxq1srKu5aQlBRVKXSEICZZQWzRj1dYIoHRptSrlBOpKQItqyO6OfzGGlCK1zTq6zsRdA6LZm2ugOZnr2Ycjm9Dlg4v_4T99zV5fc9CnfgGiRXi6</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Interface trap generation and recovery mechanisms during and after positive bias stress in metal-oxide-semiconductor structures</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>AIP_美国物理联合会现刊（与NSTL共建）</source><creator>Samanta, Piyas ; Huang, Heng-Sheng ; Chen, Shuang-Yuan ; Tzeng, Tsung-Jian ; Wang, Mu-Chun</creator><creatorcontrib>Samanta, Piyas ; Huang, Heng-Sheng ; Chen, Shuang-Yuan ; Tzeng, Tsung-Jian ; Wang, Mu-Chun</creatorcontrib><description>Interface trap (
N
it
) generation and their partial recovery during and after cessation of the positive bias-temperature stress (PBTS) in
n
-type metal-oxide-semiconductor capacitors have been investigated. The analysis of experimental results indicates that
N
it
creation is caused by the depassivation of
Si
3
≡
Si
-
H
bonds at the Si/SiO
2
interface by the atomic neutral hydrogen (H
0
) cracked via electron impact at or near gate/oxide interface during electron injection from the substrate.
N
it
recovery after interruption of the stress is due to back diffusion of H
2
species toward the Si/SiO
2
interface and repassivation of
Si
3
≡
Si
*
dangling bonds. We propose that in absence of holes, a modified one dimensional reaction-diffusion (R-D) model following three step degradation sequences can qualitatively explain the generation and the recovery of
N
it
during and after PBTS.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4711216</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2012-05, Vol.100 (20), p.203503-203503-4</ispartof><rights>2012 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-6a2b0d028b6c63d28829fe317c267c1021dec6dca43f8c11365d6352918701fc3</citedby><cites>FETCH-LOGICAL-c350t-6a2b0d028b6c63d28829fe317c267c1021dec6dca43f8c11365d6352918701fc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.4711216$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,782,784,795,27924,27925,76383</link.rule.ids></links><search><creatorcontrib>Samanta, Piyas</creatorcontrib><creatorcontrib>Huang, Heng-Sheng</creatorcontrib><creatorcontrib>Chen, Shuang-Yuan</creatorcontrib><creatorcontrib>Tzeng, Tsung-Jian</creatorcontrib><creatorcontrib>Wang, Mu-Chun</creatorcontrib><title>Interface trap generation and recovery mechanisms during and after positive bias stress in metal-oxide-semiconductor structures</title><title>Applied physics letters</title><description>Interface trap (
N
it
) generation and their partial recovery during and after cessation of the positive bias-temperature stress (PBTS) in
n
-type metal-oxide-semiconductor capacitors have been investigated. The analysis of experimental results indicates that
N
it
creation is caused by the depassivation of
Si
3
≡
Si
-
H
bonds at the Si/SiO
2
interface by the atomic neutral hydrogen (H
0
) cracked via electron impact at or near gate/oxide interface during electron injection from the substrate.
N
it
recovery after interruption of the stress is due to back diffusion of H
2
species toward the Si/SiO
2
interface and repassivation of
Si
3
≡
Si
*
dangling bonds. We propose that in absence of holes, a modified one dimensional reaction-diffusion (R-D) model following three step degradation sequences can qualitatively explain the generation and the recovery of
N
it
during and after PBTS.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp1kLtOAzEQRS0EEiFQ8AduKTZ47Kx30yChiEekSDRQr5zxbDDK2pHtRKTi19k8REc1M7rnTnEYuwUxAqHVPYzGFYAEfcYGIKqqUAD1ORsIIVShJyVcsquUvvqzlEoN2M_MZ4qtQeI5mjVfkqdosgueG295JAxbijveEX4a71KXuN1E55eH2LR9ma9DctltiS-cSTzlSClx5_tONqsifDtLRaLOYfB2gznEPdMvmx68ZhetWSW6Oc0h-3h-ep--FvO3l9n0cV6gKkUutJELYYWsFxq1srKu5aQlBRVKXSEICZZQWzRj1dYIoHRptSrlBOpKQItqyO6OfzGGlCK1zTq6zsRdA6LZm2ugOZnr2Ycjm9Dlg4v_4T99zV5fc9CnfgGiRXi6</recordid><startdate>20120514</startdate><enddate>20120514</enddate><creator>Samanta, Piyas</creator><creator>Huang, Heng-Sheng</creator><creator>Chen, Shuang-Yuan</creator><creator>Tzeng, Tsung-Jian</creator><creator>Wang, Mu-Chun</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120514</creationdate><title>Interface trap generation and recovery mechanisms during and after positive bias stress in metal-oxide-semiconductor structures</title><author>Samanta, Piyas ; Huang, Heng-Sheng ; Chen, Shuang-Yuan ; Tzeng, Tsung-Jian ; Wang, Mu-Chun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-6a2b0d028b6c63d28829fe317c267c1021dec6dca43f8c11365d6352918701fc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Samanta, Piyas</creatorcontrib><creatorcontrib>Huang, Heng-Sheng</creatorcontrib><creatorcontrib>Chen, Shuang-Yuan</creatorcontrib><creatorcontrib>Tzeng, Tsung-Jian</creatorcontrib><creatorcontrib>Wang, Mu-Chun</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Samanta, Piyas</au><au>Huang, Heng-Sheng</au><au>Chen, Shuang-Yuan</au><au>Tzeng, Tsung-Jian</au><au>Wang, Mu-Chun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Interface trap generation and recovery mechanisms during and after positive bias stress in metal-oxide-semiconductor structures</atitle><jtitle>Applied physics letters</jtitle><date>2012-05-14</date><risdate>2012</risdate><volume>100</volume><issue>20</issue><spage>203503</spage><epage>203503-4</epage><pages>203503-203503-4</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Interface trap (
N
it
) generation and their partial recovery during and after cessation of the positive bias-temperature stress (PBTS) in
n
-type metal-oxide-semiconductor capacitors have been investigated. The analysis of experimental results indicates that
N
it
creation is caused by the depassivation of
Si
3
≡
Si
-
H
bonds at the Si/SiO
2
interface by the atomic neutral hydrogen (H
0
) cracked via electron impact at or near gate/oxide interface during electron injection from the substrate.
N
it
recovery after interruption of the stress is due to back diffusion of H
2
species toward the Si/SiO
2
interface and repassivation of
Si
3
≡
Si
*
dangling bonds. We propose that in absence of holes, a modified one dimensional reaction-diffusion (R-D) model following three step degradation sequences can qualitatively explain the generation and the recovery of
N
it
during and after PBTS.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.4711216</doi></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2012-05, Vol.100 (20), p.203503-203503-4 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_4711216 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP_美国物理联合会现刊（与NSTL共建） |
| title | Interface trap generation and recovery mechanisms during and after positive bias stress in metal-oxide-semiconductor structures |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T16%3A05%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Interface%20trap%20generation%20and%20recovery%20mechanisms%20during%20and%20after%20positive%20bias%20stress%20in%20metal-oxide-semiconductor%20structures&rft.jtitle=Applied%20physics%20letters&rft.au=Samanta,%20Piyas&rft.date=2012-05-14&rft.volume=100&rft.issue=20&rft.spage=203503&rft.epage=203503-4&rft.pages=203503-203503-4&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.4711216&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c350t-6a2b0d028b6c63d28829fe317c267c1021dec6dca43f8c11365d6352918701fc3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |