On the origin of the 265 nm absorption band in AlN bulk crystals

Single crystal AlN provides a native substrate for Al-rich AlGaN that is needed for the development of efficient deep ultraviolet light emitting and laser diodes. An absorption band centered around 4.7 eV (∼265 nm) with an absorption coefficient above 1000 cm−1 is observed in these substrates. Based...

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Bibliographic Details
Published in:Applied physics letters 2012-05, Vol.100 (19)
Main Authors: Collazo, Ramón, Xie, Jinqiao, Gaddy, Benjamin E., Bryan, Zachary, Kirste, Ronny, Hoffmann, Marc, Dalmau, Rafael, Moody, Baxter, Kumagai, Yoshinao, Nagashima, Toru, Kubota, Yuki, Kinoshita, Toru, Koukitu, Akinori, Irving, Douglas L., Sitar, Zlatko
Format: Article
Language:English
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Summary:Single crystal AlN provides a native substrate for Al-rich AlGaN that is needed for the development of efficient deep ultraviolet light emitting and laser diodes. An absorption band centered around 4.7 eV (∼265 nm) with an absorption coefficient above 1000 cm−1 is observed in these substrates. Based on density functional theory calculations, substitutional carbon on the nitrogen site introduces absorption at this energy. A series of single crystalline wafers were used to demonstrate that this absorption band linearly increased with carbon, strongly supporting the model that CN- is the predominant state for carbon in AlN.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4717623