Characteristics of indium incorporation in InGaN/GaN multiple quantum wells grown on a-plane and c-plane GaN

We investigated the characteristics of InGaN-based multiple quantum wells (MQWs) grown on a-plane and c-plane GaN templates, which were grown by metal-organic chemical vapor deposition onto r-plane and c-plane sapphire, respectively. A shorter photoluminescence peak wavelength and peaks with larger...

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Bibliographic Details
Published in:Applied physics letters 2012-05, Vol.100 (21), p.212103-212103-4
Main Authors: Song, Keun-Man, Kim, Jong-Min, Kang, Bong-Kyun, Yoon, Dae-Ho, Kang, S., Lee, Sang-Won, Lee, Sung-Nam
Format: Article
Language:English
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Summary:We investigated the characteristics of InGaN-based multiple quantum wells (MQWs) grown on a-plane and c-plane GaN templates, which were grown by metal-organic chemical vapor deposition onto r-plane and c-plane sapphire, respectively. A shorter photoluminescence peak wavelength and peaks with larger full-width at half-maximum are observed for MQWs grown on an a-plane GaN template compared with a c-plane GaN template, despite the same growth conditions used. A growth model based on the atomic configuration of the growing surfaces is proposed to explain the difference in optical emission properties and indium incorporation between a-plane and c-plane MQWs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4720507