Comment on “Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited” [J. Appl. Phys. 110, 063519 (2011)]

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Bibliographic Details
Published in:Journal of applied physics 2012-06, Vol.111 (11)
Main Authors: Voronkov, V. V., Falster, R.
Format: Article
Language:English
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ISSN:0021-8979
1089-7550
DOI:10.1063/1.4729524