Determination of conduction band offset between strained CdSe and ZnSe layers using deep level transient spectroscopy

The conduction band offset between strained CdSe layers embedded in unintentionally n-type doped ZnSe is measured using deep level transient spectroscopy and reported. The activation energy for electrons in three monolayers thin ultra thin quantum wells (UTQWs) is obtained, with a value of 223 ± 10 ...

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Bibliographic Details
Published in:Applied physics letters 2012-06, Vol.100 (25)
Main Author: Rangel-Kuoppa, Victor-Tapio
Format: Article
Language:English
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Summary:The conduction band offset between strained CdSe layers embedded in unintentionally n-type doped ZnSe is measured using deep level transient spectroscopy and reported. The activation energy for electrons in three monolayers thin ultra thin quantum wells (UTQWs) is obtained, with a value of 223 ± 10 meV. This corresponds to an UTQW barrier height (the conduction band offset) between 742 meV and 784 meV. These values show that the band gap misfit between strained CdSe and ZnSe is around 70% to 74% in the conduction band.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4729764