Electronic structure of lead telluride-based alloys, doped with vanadium

• Published in: Low temperature physics (Woodbury, N.Y.) N.Y.), 2013-01, Vol.39 (1), p.76-83
• Main Authors: Skipetrov, E. P., Golovanov, A. N., Slynko, E. I., Slynko, V. E.
• Format: Article
• Language: English
• Subjects: Alloys; Bridgman method; Concentration (composition); Electronic structure; Fermi surfaces; Low temperature physics; Vanadium; Vanadium base alloys
• ISSN: 1063-777X; 1090-6517
• DOI: 10.1063/1.4775748

The crystal structure, composition, galvanomagnetic properties in low magnetic fields (4.2 K ≤ T ≤ 300 K, B ≤ 0.07 T), and the Shubnikov–de Haas effect (T = 4.2 K, B ≤ 7 T) are studied in Pb1− x − y Sn x V y Te (x = 0, 0.05–0.18) alloys synthesized by the Bridgman technique with variable vanadium impurity concentrations. It is shown that increasing the vanadium content leads to the formation of regions enriched in vanadium and of microscopic inclusions of compounds with compositions close to V3Te4. In Pb1− y V y Te stabilization of the Fermi level by a deep vanadium level, an insulator–metal transition, and a rise in the free electron concentration are observed as the vanadium content is increased. The variation in the free charge carrier concentration with increasing vanadium concentration in Pb1− y V y Te and Pb1− x − y Sn x V y Te (x = 0.05–0.18) alloys is compared. Possible models for rearrangement of the electronic structure in Pb1− x − y Sn x V y Te alloys with vanadium doping are discussed.