Influence of interfacial properties on thermal transport at gold:silicon contacts

We measure the Kapitza conductances at Au:Si contacts from 100 to 296 K via time-domain thermoreflectance. Contacts are fabricated by evaporating Au films onto Si substrates. Prior to Au deposition, the Si substrates receive pretreatments in order to modify interfacial properties, i.e., bonding and...

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Published in:Applied physics letters 2013-02, Vol.102 (8)
Main Authors: Duda, J. C., Yang, C.-Y. P., Foley, B. M., Cheaito, R., Medlin, D. L., Jones, R. E., Hopkins, P. E.
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container_title Applied physics letters
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Yang, C.-Y. P.
Foley, B. M.
Cheaito, R.
Medlin, D. L.
Jones, R. E.
Hopkins, P. E.
description We measure the Kapitza conductances at Au:Si contacts from 100 to 296 K via time-domain thermoreflectance. Contacts are fabricated by evaporating Au films onto Si substrates. Prior to Au deposition, the Si substrates receive pretreatments in order to modify interfacial properties, i.e., bonding and structural disorder. Through the inclusion of a Ti adhesion layer and the removal of the native oxide, Kapitza conductance can be enhanced by a factor of four at 296 K. Furthermore, interfacial roughness is found to have a negligible effect, which we attribute to the already low conductances of poorly bonded Au:Si contacts.
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_4793431</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_4793431</sourcerecordid><originalsourceid>FETCH-LOGICAL-c295t-a0e1c177cf946fec2397fe31892824f4f6deccb00827057380dff24717eb836d3</originalsourceid><addsrcrecordid>eNotkE9LxDAUxIMoWFcPfoNcPXTNy0ubxpss_llYEEHPJZu-aKTblCQe_PZW3MMwzDDM4cfYNYg1iBZvYa20QYVwwioQWtcI0J2ySgiBdWsaOGcXOX8tsZGIFXvdTn78pskRj56HqVDy1gU78jnFmVIJlHmcePmkdFjakuyU55gKt4V_xHG4y2EMblksKtaVfMnOvB0zXR19xd4fH942z_Xu5Wm7ud_VTpqm1FYQONDaeaNaT06i0Z4QOiM7qbzy7UDO7YXopBaNxk4M3kulQdO-w3bAFbv5_3Up5pzI93MKB5t-ehD9H4se-iML_AWwSFHm</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Influence of interfacial properties on thermal transport at gold:silicon contacts</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>AIP - American Institute of Physics</source><creator>Duda, J. C. ; Yang, C.-Y. P. ; Foley, B. M. ; Cheaito, R. ; Medlin, D. L. ; Jones, R. E. ; Hopkins, P. E.</creator><creatorcontrib>Duda, J. C. ; Yang, C.-Y. P. ; Foley, B. M. ; Cheaito, R. ; Medlin, D. L. ; Jones, R. E. ; Hopkins, P. E.</creatorcontrib><description>We measure the Kapitza conductances at Au:Si contacts from 100 to 296 K via time-domain thermoreflectance. Contacts are fabricated by evaporating Au films onto Si substrates. Prior to Au deposition, the Si substrates receive pretreatments in order to modify interfacial properties, i.e., bonding and structural disorder. Through the inclusion of a Ti adhesion layer and the removal of the native oxide, Kapitza conductance can be enhanced by a factor of four at 296 K. Furthermore, interfacial roughness is found to have a negligible effect, which we attribute to the already low conductances of poorly bonded Au:Si contacts.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4793431</identifier><language>eng</language><ispartof>Applied physics letters, 2013-02, Vol.102 (8)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-a0e1c177cf946fec2397fe31892824f4f6deccb00827057380dff24717eb836d3</citedby><cites>FETCH-LOGICAL-c295t-a0e1c177cf946fec2397fe31892824f4f6deccb00827057380dff24717eb836d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,782,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Duda, J. C.</creatorcontrib><creatorcontrib>Yang, C.-Y. P.</creatorcontrib><creatorcontrib>Foley, B. M.</creatorcontrib><creatorcontrib>Cheaito, R.</creatorcontrib><creatorcontrib>Medlin, D. L.</creatorcontrib><creatorcontrib>Jones, R. E.</creatorcontrib><creatorcontrib>Hopkins, P. E.</creatorcontrib><title>Influence of interfacial properties on thermal transport at gold:silicon contacts</title><title>Applied physics letters</title><description>We measure the Kapitza conductances at Au:Si contacts from 100 to 296 K via time-domain thermoreflectance. Contacts are fabricated by evaporating Au films onto Si substrates. Prior to Au deposition, the Si substrates receive pretreatments in order to modify interfacial properties, i.e., bonding and structural disorder. Through the inclusion of a Ti adhesion layer and the removal of the native oxide, Kapitza conductance can be enhanced by a factor of four at 296 K. Furthermore, interfacial roughness is found to have a negligible effect, which we attribute to the already low conductances of poorly bonded Au:Si contacts.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNotkE9LxDAUxIMoWFcPfoNcPXTNy0ubxpss_llYEEHPJZu-aKTblCQe_PZW3MMwzDDM4cfYNYg1iBZvYa20QYVwwioQWtcI0J2ySgiBdWsaOGcXOX8tsZGIFXvdTn78pskRj56HqVDy1gU78jnFmVIJlHmcePmkdFjakuyU55gKt4V_xHG4y2EMblksKtaVfMnOvB0zXR19xd4fH942z_Xu5Wm7ud_VTpqm1FYQONDaeaNaT06i0Z4QOiM7qbzy7UDO7YXopBaNxk4M3kulQdO-w3bAFbv5_3Up5pzI93MKB5t-ehD9H4se-iML_AWwSFHm</recordid><startdate>20130225</startdate><enddate>20130225</enddate><creator>Duda, J. C.</creator><creator>Yang, C.-Y. P.</creator><creator>Foley, B. M.</creator><creator>Cheaito, R.</creator><creator>Medlin, D. L.</creator><creator>Jones, R. E.</creator><creator>Hopkins, P. E.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130225</creationdate><title>Influence of interfacial properties on thermal transport at gold:silicon contacts</title><author>Duda, J. C. ; Yang, C.-Y. P. ; Foley, B. M. ; Cheaito, R. ; Medlin, D. L. ; Jones, R. E. ; Hopkins, P. E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-a0e1c177cf946fec2397fe31892824f4f6deccb00827057380dff24717eb836d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Duda, J. C.</creatorcontrib><creatorcontrib>Yang, C.-Y. P.</creatorcontrib><creatorcontrib>Foley, B. M.</creatorcontrib><creatorcontrib>Cheaito, R.</creatorcontrib><creatorcontrib>Medlin, D. L.</creatorcontrib><creatorcontrib>Jones, R. E.</creatorcontrib><creatorcontrib>Hopkins, P. E.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Duda, J. C.</au><au>Yang, C.-Y. P.</au><au>Foley, B. M.</au><au>Cheaito, R.</au><au>Medlin, D. L.</au><au>Jones, R. E.</au><au>Hopkins, P. E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of interfacial properties on thermal transport at gold:silicon contacts</atitle><jtitle>Applied physics letters</jtitle><date>2013-02-25</date><risdate>2013</risdate><volume>102</volume><issue>8</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We measure the Kapitza conductances at Au:Si contacts from 100 to 296 K via time-domain thermoreflectance. Contacts are fabricated by evaporating Au films onto Si substrates. Prior to Au deposition, the Si substrates receive pretreatments in order to modify interfacial properties, i.e., bonding and structural disorder. Through the inclusion of a Ti adhesion layer and the removal of the native oxide, Kapitza conductance can be enhanced by a factor of four at 296 K. Furthermore, interfacial roughness is found to have a negligible effect, which we attribute to the already low conductances of poorly bonded Au:Si contacts.</abstract><doi>10.1063/1.4793431</doi></addata></record>
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title Influence of interfacial properties on thermal transport at gold:silicon contacts
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T14%3A55%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Influence%20of%20interfacial%20properties%20on%20thermal%20transport%20at%20gold:silicon%20contacts&rft.jtitle=Applied%20physics%20letters&rft.au=Duda,%20J.%20C.&rft.date=2013-02-25&rft.volume=102&rft.issue=8&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4793431&rft_dat=%3Ccrossref%3E10_1063_1_4793431%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c295t-a0e1c177cf946fec2397fe31892824f4f6deccb00827057380dff24717eb836d3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true