Drifting electron excitation of acoustic phonons: Cerenkov-like effect in n-GaN

The process of generation of acoustic phonons by way of drifting electron excitation in polar semiconductors is considered. Similarly to what is present in LO phonons, the emergence of a condensation of the pumped energy in modes around an off-center region of the Brillouin zone is evidenced. The ph...

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Published in:Journal of applied physics 2013-03, Vol.113 (11)
Main Authors: Rodrigues, Clóves G., Vasconcellos, Áurea R., Luzzi, Roberto
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Language:English
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description The process of generation of acoustic phonons by way of drifting electron excitation in polar semiconductors is considered. Similarly to what is present in LO phonons, the emergence of a condensation of the pumped energy in modes around an off-center region of the Brillouin zone is evidenced. The phonons are emitted within a lobe-like distribution with an axis along the direction of the electric field. A numerical calculation for the case of GaN is done, which shows that the phenomenon can be largely enhanced at high carrier densities and in strong piezoelectric materials.
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title Drifting electron excitation of acoustic phonons: Cerenkov-like effect in n-GaN
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