Use of ordered mesoporous SiO2 as protection against thermal disturbance in phase-change memory

To commercialize phase change memory (PCM), a drastic change of resistivity at specific temperatures and a low power consumption to minimize heat transfer to neighboring cells are needed. Therefore, in this work, an ordered mesoporous SiO2 thin film of 45% porosity was introduced as an intercell die...

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Bibliographic Details
Published in:Applied physics letters 2013-04, Vol.102 (14)
Main Authors: Ha, Tae-Jung, Shin, Sangwoo, Keun Kim, Hyung, Hong, Min-Hee, Park, Chang-Sun, Hee Cho, Hyung, Jin Choi, Doo, Park, Hyung-Ho
Format: Article
Language:English
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Summary:To commercialize phase change memory (PCM), a drastic change of resistivity at specific temperatures and a low power consumption to minimize heat transfer to neighboring cells are needed. Therefore, in this work, an ordered mesoporous SiO2 thin film of 45% porosity was introduced as an intercell dielectric in Ge1Sb4Te7 PCM because it has a low thermal conductivity (0.177 W/m K). By using a hybrid layer structure of mesoporous and dense SiO2 films, the temperature of neighboring cells could be decreased from 393.3 K to 353.2 K, corresponding to a 100-fold change in resistivity.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4801476