High-responsivity GeSn short-wave infrared p-i-n photodetectors

Surface-illuminated GeSn p-i-n photodetectors (PDs) with Ge0.964Sn0.036 active layer on Ge substrate were fabricated. Photodetection up to 1.95 μm is achieved with a responsivity of 0.13 A/W. High responsivities of 0.56 and 0.71 A/W were achieved under a reverse bias voltage of 3 V at 1640 and 1790 ...

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Bibliographic Details
Published in:Applied physics letters 2013-04, Vol.102 (14)
Main Authors: Zhang, Dongliang, Xue, Chunlai, Cheng, Buwen, Su, Shaojian, Liu, Zhi, Zhang, Xu, Zhang, Guangze, Li, Chuanbo, Wang, Qiming
Format: Article
Language:English
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Summary:Surface-illuminated GeSn p-i-n photodetectors (PDs) with Ge0.964Sn0.036 active layer on Ge substrate were fabricated. Photodetection up to 1.95 μm is achieved with a responsivity of 0.13 A/W. High responsivities of 0.56 and 0.71 A/W were achieved under a reverse bias voltage of 3 V at 1640 and 1790 nm, respectively. A low dark current of 1.08 μA was obtained at a reverse bias of 1 V with a diameter of 150 μm, which corresponds to a current density of 6.1 mA/cm2. This value is among the lowest dark current densities reported among GeSn PDs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4801957