Thickness dependence of current-induced domain wall motion in a Co/Ni multi-layer with out-of-plane anisotropy

Thickness dependence of current-induced domain wall (DW) motion in a perpendicularly magnetized [Co/Ni]N multilayered wire containing Ta/Pt capping and Pt/Ta seed layers has been studied. The thickness of the magnetic layer was controlled by the stacking number, N. The threshold current density for...

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Bibliographic Details
Published in:Applied physics letters 2013-04, Vol.102 (15)
Main Authors: Tanigawa, Hironobu, Suzuki, Tetsuhiro, Fukami, Shunsuke, Suemitsu, Katsumi, Ohshima, Norikazu, Kariyada, Eiji
Format: Article
Language:English
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Summary:Thickness dependence of current-induced domain wall (DW) motion in a perpendicularly magnetized [Co/Ni]N multilayered wire containing Ta/Pt capping and Pt/Ta seed layers has been studied. The thickness of the magnetic layer was controlled by the stacking number, N. The threshold current density for driving DW had a local minimum at N = 3 and the velocity of DW motion decreased with N. Estimation of carrier spin polarization from measurements of DW velocity revealed that a thinner Co/Ni stack adjacent to the Pt layers reduced the carrier spin polarization and the strength of adiabatic spin transfer torque.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4802266