All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices

Time-resolved differential transmission measurements were used to investigate vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices (T2SLs). By optically generating excess carriers near one end of the mid-wave T2SL and measuring the transit time to a thin, lower-band...

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Bibliographic Details
Published in:Applied physics letters 2013-05, Vol.102 (20)
Main Authors: Olson, B. V., Murray, L. M., Prineas, J. P., Flatté, M. E., Olesberg, J. T., Boggess, T. F.
Format: Article
Language:English
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Summary:Time-resolved differential transmission measurements were used to investigate vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices (T2SLs). By optically generating excess carriers near one end of the mid-wave T2SL and measuring the transit time to a thin, lower-bandgap T2SL at the other end, the time-of-flight of vertically diffusing carriers was measured. Through investigation of both unintentionally doped and p-type T2SLs, the vertical hole and electron diffusion coefficients were measured to be 0.04 ± 0.03 cm2/s and 4.7 ± 0.5 cm2/s, corresponding to vertical mobilities of 6 ± 5 cm2/Vs and 700 ± 80 cm2/Vs, respectively, at a temperature of 77 K.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4807433