Surface plasma pretreatment for enhanced diamond nucleation on AlN

The surface of polycrystalline aluminum nitride (AlN) thin films is exposed to different gas discharge plasmas (N2, O2, and CF4) followed by a water-based colloidal seeding of ultra-dispersed nanodiamond particles. Fluorination of the AlN surface enhances the seeding density, whereas the oxidized su...

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Bibliographic Details
Published in:Applied physics letters 2013-05, Vol.102 (20)
Main Authors: Pobedinskas, P., Degutis, G., Dexters, W., Janssen, W., Janssens, S. D., Conings, B., Ruttens, B., D'Haen, J., Boyen, H.-G., Hardy, A., Van Bael, M. K., Haenen, K.
Format: Article
Language:English
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Summary:The surface of polycrystalline aluminum nitride (AlN) thin films is exposed to different gas discharge plasmas (N2, O2, and CF4) followed by a water-based colloidal seeding of ultra-dispersed nanodiamond particles. Fluorination of the AlN surface enhances the seeding density, whereas the oxidized surface does not yield any nucleation sites. In the former case, the seeding density improves by almost three orders of magnitude as compared to the untreated and N2 pretreated samples, and allows to grow pinhole-free nanocrystalline diamond film on AlN. Finally, we demonstrate a route towards selective diamond growth on AlN thin films by employing CF4 plasma pretreatment together with photolithography.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4807591