Photoemission characteristics of (Cs, O) activation exponential-doping Ga0.37Al0.63As photocathodes

Based on the studies of the GaAs photocathode, the surface model of the Ga0.37Al0.63As photocathode is investigated and the energy distributions of electrons reaching the surface charge region, reaching the surface and emitting into vacuum are calculated. The (Cs, O) adsorption and photoemission cha...

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Bibliographic Details
Published in:Journal of applied physics 2013-06, Vol.113 (21)
Main Authors: Chen, Xinlong, Zhao, Jing, Chang, Benkang, Yu, Xiaohua, Hao, Guanghui, Xu, Yuan, Cheng, Hongchang
Format: Article
Language:English
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Summary:Based on the studies of the GaAs photocathode, the surface model of the Ga0.37Al0.63As photocathode is investigated and the energy distributions of electrons reaching the surface charge region, reaching the surface and emitting into vacuum are calculated. The (Cs, O) adsorption and photoemission characteristics of the Ga0.37Al0.63As photocathode are studied according to the experiments. We use the quantum efficiency formula to fit the experimental curve, and obtain the performance parameters of the photocathode and the surface barrier parameters. The results show that the surface barrier of the Ga0.37Al0.63As photocathode is similar to that of the GaAs photocathode. The prepared reflection-mode Ga0.37Al0.63As photocathode responds to the blue-green light, while the transmission-mode Ga0.37Al0.63As photocathode is sensitive to the 532 nm light.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4808291