Dynamics of photoexcited carriers and spins in InAsP ternary alloys

The recent rapid progress in the field of spintronics involves extensive measurements of carrier and spin relaxation dynamics in III-V semiconductors. In addition, as the switching rates in devices are pushed to higher frequencies, it is important to understand carrier dynamic phenomena in semicondu...

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Bibliographic Details
Published in:Applied physics letters 2013-06, Vol.102 (22)
Main Authors: Meeker, M. A., Magill, B. A., Merritt, T. R., Bhowmick, M., McCutcheon, K., Khodaparast, G. A., Tischler, J. G., McGill, S., Choi, S. G., Palmstrøm, C. J.
Format: Article
Language:English
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Summary:The recent rapid progress in the field of spintronics involves extensive measurements of carrier and spin relaxation dynamics in III-V semiconductors. In addition, as the switching rates in devices are pushed to higher frequencies, it is important to understand carrier dynamic phenomena in semiconductors on femtosecond time-scales. In this work, we employed time and spin resolved differential transmission measurements; to probe carrier and spin relaxation times in several InAsP ternary alloys. Our results demonstrate the sensitivity of the spin and carrier dynamics in this material system to the excitation wavelengths, the As concentrations, and temperature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4808346