Plasma doping and reduced crystalline damage for conformally doped fin field effect transistors

Low frequency noise and hot carrier reliability analysis of the plasma doping scheme are investigated for advanced fin field effect transistor (FinFET) conformal doping. Plasma doping improves device performances and hot carrier reliability for both fin resistors and FinFETs due to the absence of cr...

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Bibliographic Details
Published in:Applied physics letters 2013-06, Vol.102 (22)
Main Authors: Woo Lee, Jae, Sasaki, Yuichiro, Ju Cho, Moon, Togo, Mitsuhiro, Boccardi, Guillaume, Ritzenthaler, Romain, Eneman, Geert, Chiarella, Thomas, Brus, Stephan, Horiguchi, Naoto, Groeseneken, Guido, Thean, Aaron
Format: Article
Language:English
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Summary:Low frequency noise and hot carrier reliability analysis of the plasma doping scheme are investigated for advanced fin field effect transistor (FinFET) conformal doping. Plasma doping improves device performances and hot carrier reliability for both fin resistors and FinFETs due to the absence of crystalline damage for narrow fins. One decade lower noise level and Coulomb scattering coefficient related to the crystalline damage suppression are observed for the plasma doping compared to the standard ion-implantation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4809755